TY - JOUR
T1 - Preparation of crystalline TiC thin films grown by pulsed Nd:YAG laser deposition using Ti target in methane gas
AU - Suda, Yoshiaki
AU - Kawasaki, Hiroharu
AU - Doi, Kazuya
AU - Nanba, Jun
AU - Ohshima, Tamiko
N1 - Funding Information:
This work was supported in part by the Grant-in-Aid for Scientific Research (B) and the Regional Science Promoter and a Research Fund from the Nagasaki Super Technology Development Association. The authors wish to thank Drs. K. Ebihara and T. Ikegami of Kumamoto University for their helpful discussions. The authors also thank Dr. H. Abe and Mr. H. Yoshida of the Ceramic Research Center of Nagasaki for their assistance.
PY - 2002/4
Y1 - 2002/4
N2 - Titanium carbide (TiC) thin films that are smooth and pinhole-free have been synthesized on Si(100) substrates by a pulsed neodymium:yttrium-aluminum-garnet (Nd:YAG) laser deposition method using titanium and TiC targets in methane gas. Glancing angle X-ray diffraction (GXRD) showed that polycrystalline films with components of TiC and Ti can be prepared using a Ti target. Single-phase TiC films can be synthesized using a TiC target. It was found that the methane gas pressure can control the crystallinity and composition. The root-mean-square (RMS) roughness of the film, as measured by an atomic force microscope (AFM), was lower than 2 nm in all the deposition areas. The film thickness, measured by α-step, was about 92 nm and the growth rate was approximately 3.1 nm/min. Measurements of optical emission spectra were performed to estimate the processing plasma state.
AB - Titanium carbide (TiC) thin films that are smooth and pinhole-free have been synthesized on Si(100) substrates by a pulsed neodymium:yttrium-aluminum-garnet (Nd:YAG) laser deposition method using titanium and TiC targets in methane gas. Glancing angle X-ray diffraction (GXRD) showed that polycrystalline films with components of TiC and Ti can be prepared using a Ti target. Single-phase TiC films can be synthesized using a TiC target. It was found that the methane gas pressure can control the crystallinity and composition. The root-mean-square (RMS) roughness of the film, as measured by an atomic force microscope (AFM), was lower than 2 nm in all the deposition areas. The film thickness, measured by α-step, was about 92 nm and the growth rate was approximately 3.1 nm/min. Measurements of optical emission spectra were performed to estimate the processing plasma state.
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U2 - 10.1016/S1044-5803(02)00243-7
DO - 10.1016/S1044-5803(02)00243-7
M3 - Article
AN - SCOPUS:0036526236
SN - 1044-5803
VL - 48
SP - 221
EP - 228
JO - Materials Characterization
JF - Materials Characterization
IS - 2-3
ER -