Preparation of Cr-doped TiO2 thin film of p-type conduction for gas sensor application

A. Ruiz; A. Cornet; G. Sakai; K. Shimanoe; J. R. Morante; N. Yamazoe

doi:10.1246/cl.2002.892

Preparation of Cr-doped TiO₂ thin film of p-type conduction for gas sensor application

A. Ruiz, A. Cornet, G. Sakai, K. Shimanoe, J. R. Morante, N. Yamazoe

Functional Materials Science

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Titanium dioxide (TiO₂) could be doped with as much as 8.7 atom% Cr by means of a sol-gel method. XRD analysis revealed that the powder of Cr (8.7 atom%)-doped TiO₂ calcined at 500°C consisted of small crystallites ascribale to anatase structure. The thin film of doped TiO₂ (70μm) at this composition was found to behave as a p-type semiconductor on exposure to CO and NO₂ in air: it responded to dilute NO₂ with a sharp decrease in electrical resistance.

Original language	English
Pages (from-to)	892-893
Number of pages	2
Journal	Chemistry Letters
Issue number	9
DOIs	https://doi.org/10.1246/cl.2002.892
Publication status	Published - Sept 5 2002

All Science Journal Classification (ASJC) codes

Chemistry(all)

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10.1246/cl.2002.892

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AU - Ruiz, A.

AU - Cornet, A.

AU - Sakai, G.

AU - Shimanoe, K.

AU - Morante, J. R.

AU - Yamazoe, N.

PY - 2002/9/5

Y1 - 2002/9/5

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AB - Titanium dioxide (TiO2) could be doped with as much as 8.7 atom% Cr by means of a sol-gel method. XRD analysis revealed that the powder of Cr (8.7 atom%)-doped TiO2 calcined at 500°C consisted of small crystallites ascribale to anatase structure. The thin film of doped TiO2 (70μm) at this composition was found to behave as a p-type semiconductor on exposure to CO and NO2 in air: it responded to dilute NO2 with a sharp decrease in electrical resistance.

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Preparation of Cr-doped TiO₂ thin film of p-type conduction for gas sensor application

Abstract

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