Preparation and characterization of c-axis oriented epitaxial Bi2VO5.5 thin films prepared by metalorganic chemical vapor deposition

K. Ishikawa; T. Sakai; T. Watanabe; H. Funakubo

Preparation and characterization of c-axis oriented epitaxial Bi₂VO_5.5 thin films prepared by metalorganic chemical vapor deposition

K. Ishikawa, T. Sakai, T. Watanabe, H. Funakubo

Research output: Contribution to journal › Conference article › peer-review

Abstract

Bi₂VO_5.5 (BVO) thin films were epitaxially grown on (100)SrTiO₃ and (100)CaRuO₃//(100)SrTiO₃ substrates by metalorganic chemical vapor deposition(MOCVD). The lattice mismatch between the film and the substrates affected the film orientation and the crystallinity at a low temperature of 400 °C. The BVO film with c-axis orientation had a low dielectric constant of 43 and low magnitude of leakage current. The c-axis-oriented BVO film displayed the ferroelectricity with two times the remanent polarization (2Pr) and the coercive field (Ec) of 0.06 μC/cm² and 9 kV/cm, respectively.

Original language	English
Pages (from-to)	189-192
Number of pages	4
Journal	Key Engineering Materials
Volume	214-215
Publication status	Published - 2002
Externally published	Yes
Event	1st Asian Meeting of Electroceramics - Kawasaki, Japan Duration: Oct 26 2000 → Oct 27 2000

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Preparation and characterization of c-axis oriented epitaxial Bi2VO5.5 thin films prepared by metalorganic chemical vapor deposition",

abstract = "Bi2VO5.5 (BVO) thin films were epitaxially grown on (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition(MOCVD). The lattice mismatch between the film and the substrates affected the film orientation and the crystallinity at a low temperature of 400 °C. The BVO film with c-axis orientation had a low dielectric constant of 43 and low magnitude of leakage current. The c-axis-oriented BVO film displayed the ferroelectricity with two times the remanent polarization (2Pr) and the coercive field (Ec) of 0.06 μC/cm2 and 9 kV/cm, respectively.",

author = "K. Ishikawa and T. Sakai and T. Watanabe and H. Funakubo",

year = "2002",

language = "English",

volume = "214-215",

pages = "189--192",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications",

note = "1st Asian Meeting of Electroceramics ; Conference date: 26-10-2000 Through 27-10-2000",

}

TY - JOUR

T1 - Preparation and characterization of c-axis oriented epitaxial Bi2VO5.5 thin films prepared by metalorganic chemical vapor deposition

AU - Ishikawa, K.

AU - Sakai, T.

AU - Watanabe, T.

AU - Funakubo, H.

PY - 2002

Y1 - 2002

N2 - Bi2VO5.5 (BVO) thin films were epitaxially grown on (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition(MOCVD). The lattice mismatch between the film and the substrates affected the film orientation and the crystallinity at a low temperature of 400 °C. The BVO film with c-axis orientation had a low dielectric constant of 43 and low magnitude of leakage current. The c-axis-oriented BVO film displayed the ferroelectricity with two times the remanent polarization (2Pr) and the coercive field (Ec) of 0.06 μC/cm2 and 9 kV/cm, respectively.

AB - Bi2VO5.5 (BVO) thin films were epitaxially grown on (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition(MOCVD). The lattice mismatch between the film and the substrates affected the film orientation and the crystallinity at a low temperature of 400 °C. The BVO film with c-axis orientation had a low dielectric constant of 43 and low magnitude of leakage current. The c-axis-oriented BVO film displayed the ferroelectricity with two times the remanent polarization (2Pr) and the coercive field (Ec) of 0.06 μC/cm2 and 9 kV/cm, respectively.

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M3 - Conference article

AN - SCOPUS:0036027803

SN - 1013-9826

VL - 214-215

SP - 189

EP - 192

JO - Key Engineering Materials

JF - Key Engineering Materials

T2 - 1st Asian Meeting of Electroceramics

Y2 - 26 October 2000 through 27 October 2000

ER -

Preparation and characterization of c-axis oriented epitaxial Bi₂VO_5.5 thin films prepared by metalorganic chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

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