TY - JOUR
T1 - Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films with long-range lattice matching
AU - Watanabe, Takayuki
AU - Funakubo, Hiroshi
AU - Saito, Keisuke
AU - Suzuki, Toshimasa
AU - Fujimoto, Masayuki
AU - Osada, Minoru
AU - Noguchi, Yuji
AU - Miyayama, Masaru
PY - 2002/8/26
Y1 - 2002/8/26
N2 - a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 (rutile) substrates at 630°C by metalorganic chemical vapor deposition and their perfect epitaxial growths were confirmed by several x-ray diffraction measurements. As the bottom electrode, (101)-oriented conductive materials with the same rutile-type structure as the TiO2, RuO2, and IrO2, were epitaxially grown on (101)TiO2, (012)Al2O3, and (110)Al 2O3 substrates. Finally, a- and b-axis-oriented Bi 4Ti3O12-based materials, (Bi 4-xNdx)(Ti3-yVy)O12, were epitaxially grown on these conductive substrates with high reproducibility and a well-saturated P-E hysteresis loop with a remanent polarization above 20 μC/cm2 was observed. These results open the long-range lattice matching growth (the c-axis lattice parameter is about 3.3 nm) of a- and b-axis-oriented bismuth layer-structured ferroelectrics on conductive electrodes.
AB - a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 (rutile) substrates at 630°C by metalorganic chemical vapor deposition and their perfect epitaxial growths were confirmed by several x-ray diffraction measurements. As the bottom electrode, (101)-oriented conductive materials with the same rutile-type structure as the TiO2, RuO2, and IrO2, were epitaxially grown on (101)TiO2, (012)Al2O3, and (110)Al 2O3 substrates. Finally, a- and b-axis-oriented Bi 4Ti3O12-based materials, (Bi 4-xNdx)(Ti3-yVy)O12, were epitaxially grown on these conductive substrates with high reproducibility and a well-saturated P-E hysteresis loop with a remanent polarization above 20 μC/cm2 was observed. These results open the long-range lattice matching growth (the c-axis lattice parameter is about 3.3 nm) of a- and b-axis-oriented bismuth layer-structured ferroelectrics on conductive electrodes.
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U2 - 10.1063/1.1503850
DO - 10.1063/1.1503850
M3 - Article
AN - SCOPUS:79956055074
SN - 0003-6951
VL - 81
SP - 1660
EP - 1662
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 9
ER -