Predicting the amount of carbon in carbon nanotubes grown by CH 4 rf plasmas

Atsushi Okita, Yoshiyuki Suda, Atsushi Ozeki, Hirotake Sugawara, Yosuke Sakai, Akinori Oda, Junji Nakamura

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)

Abstract

Carbon nanotubes (CNTs) were grown on Si substrates by rf C H4 plasma-enhanced chemical vapor deposition in a pressure range of 1-10 Torr, and then characterized by scanning electron microscopy. At 1 Torr, the CNTs continued growing up to 60 min, while their height at 4 Torr had leveled off at 20 min. CNTs hardly grew at 10 Torr and amorphous carbon was deposited instead. C H4 plasma was simulated using a one-dimensional fluid model to evaluate the production and transport of radicals, ions, and nonradical neutrals. The amount of simulated carbon supplied to the electrode surface via the flux of radicals and ions such as C H3, C2 H5, and C2 H5+ was consistent with estimations from experimental results.

Original languageEnglish
Article number014302
JournalJournal of Applied Physics
Volume99
Issue number1
DOIs
Publication statusPublished - 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Predicting the amount of carbon in carbon nanotubes grown by CH 4 rf plasmas'. Together they form a unique fingerprint.

Cite this