TY - GEN
T1 - Potential Influence of Surface Atomic Disorder on Fermi-level Pinning at Metal/SiGe Interface
AU - Luo, X.
AU - Nishimura, T.
AU - Yajima, T.
AU - Toriumi, A.
N1 - Funding Information:
Artificial SiGe Schottky diodes fabricated by parallel connection of Si with Ge Schottky contacts show quite different electrical properties from the real SiGe one, which suggests that the local bonding model is not the dominant mechanism for understanding the Fermi level pinning in SiGe system. In addition, the Fermi level pinning strength at metal/Si0.55Ge0.45 interface is between those at metal/Si and at metal/Ge even though there are so many disorders and defects at metal/Si0.55Ge0.45 interfaces. This fact means the disorder effect has no substantial influence on the Fermi level pinning. Thus, it is strongly suggested that the Fermi level pinning at metal/Si1-xGex interface including metal/Si and metal/Ge are dominantly characterized by the intrinsic mechanism like MIGS instead of bonding model or DIGS. Acknowledgement This work was supported by JST CREST Grant Numbers JPMJCR14F2, Japan. Reference [1] D. Guo et al., “FINFET technology featuring high mobility SiGe channel for 10nm and beyond,” Dig. Symp. VLSI Technol., 14, 2016. [2] T. Nishimura, K. Kita, and A. Toriumi, “Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface,” Appl. Phys. Lett. 91, 12 (2007). [3] H. Hasegawa, “Unified disorder induced gap state model for insulator– miconductor and metal – semiconductor interfaces,” J. Vac. Sci. Technol. B., 4, 1130 (1986). [4] W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su, and I. Lindau, “New and unified model for Schottky barrier and III– insulator interface states formation,” J. Vac. Sci. Technol. 16, 1422 (1979). [5] I. Ohdomari and K. N. Tu, “ Parallel silicide contacts,” J. Appl. Phys. 51, 3735 (1980). [6] . R T. Tung, “Formation of an electric dipole at metal-semiconductor interfaces,” Phys. evR . B 64, 205310 (2001). [7] V. Heine, T“ heory of Surface States,” Phys. evR ., 138, A1689 (1965).
PY - 2018/7/26
Y1 - 2018/7/26
N2 - The Schottky barrier heights (SBH) at metal/n-Si0.55Ge0.45 Schottky interface are reported as a function of work function of metals. In comparison of the pinning strength with metal/Si and metal/Ge, the result shows that a large amount of disorders and defects on SiGe do not have a significant effect on the Fermi level pinning (FLP), which may suggest that the intrinsic instead of extrinsic mechanism should be considered for the dominant mechanism of Fermi level pinning not only at metal/SiGe but also at metal/Si and Ge systems.
AB - The Schottky barrier heights (SBH) at metal/n-Si0.55Ge0.45 Schottky interface are reported as a function of work function of metals. In comparison of the pinning strength with metal/Si and metal/Ge, the result shows that a large amount of disorders and defects on SiGe do not have a significant effect on the Fermi level pinning (FLP), which may suggest that the intrinsic instead of extrinsic mechanism should be considered for the dominant mechanism of Fermi level pinning not only at metal/SiGe but also at metal/Si and Ge systems.
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U2 - 10.1109/EDTM.2018.8421410
DO - 10.1109/EDTM.2018.8421410
M3 - Conference contribution
AN - SCOPUS:85051502445
SN - 9781538637111
T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
SP - 47
EP - 49
BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Y2 - 13 March 2018 through 16 March 2018
ER -