Possibility of AlN vapor phase epitaxy using Li3N as a nitrogen source

Y. Kangawa, T. Nagano, K. Kakimoto

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1 Citation (Scopus)


Possibility of AlN vapor phase epitaxy using Al and Li3N as source materials was investigated. Grown product on sapphire substrate was identified by XRD and Micro-Raman measurements. The results suggest that AlON was formed under Li-N-rich condition though AlN was formed under Al-rich condition. This is because Li3N corroded surface of sapphire and oxygen, which is a constituent element of substrate, was incorporated in the product. Moreover, it is found that AlN nano-wire was formed when excessive Al was supplied during growth. These results imply that it is possible to grow AlN by choosing proper conditions especially Li-N/Al ratio.

Original languageEnglish
Pages (from-to)S340-S343
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue numberSUPPL. 2
Publication statusPublished - Jul 2009

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


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