TY - JOUR
T1 - Positive hysteresis of Ce-doped GAGG scintillator
AU - Yanagida, Takayuki
AU - Fujimoto, Yutaka
AU - Koshimizu, Masanori
AU - Watanabe, Kenichi
AU - Sato, Hiroki
AU - Yagi, Hideki
AU - Yanagitani, Takagimi
N1 - Funding Information:
This work was mainly supported by JST Sentan , A-step and partially by a Grant in Aid for Young Scientists (A)- 23686135 , and Challenging Exploratory Research- 23656584 from the Ministry of Education, Culture, Sports, Science and Technology of the Japanese government (MEXT) . Partial assistance from the Yazaki Memorial Foundation for Science and Technology, Shimazu Sci. Foundation, Kato Foundation for Promotion of Science, and Nippon Sheet Glass Foundation for Materials Science and Engineering, Tokuyama Science foundation, Iketani Science and Technology Foundation, Hitachi Metals Materials Science Foundation, Mazda Foundation, JFE 21st century Foundation, and The Asahi Glass Foundation, are also gratefully acknowledged.
PY - 2014/10
Y1 - 2014/10
N2 - Positive hysteresis and radiation tolerance to high-dose radiation exposure were investigated for Ce 1% and 3% doped Gd3(Al, Ga) 5O12 (Ce:GAGG) crystal scintillator on comparison with other garnet scintillators such Ce:YAG, Ce:LuAG, Pr:LuAG, and ceramic Ce:GAGG. When they were irradiated by several Gy 60Co γ-rays, Ce 1% doped GAGG crystal exhibited ∼20% light yield enhancement (positive hysteresis). This is the first time to observe positive hysteresis in Ce doped GAGG. On the other hand, other garnet materials did not show the positive hysteresis and their light yields were stable after 800 Gy irradiation except Pr:LuAG. The light yield of Pr:LuAG decreased largely. When irradiated Ce:GAGG which showed positive hysteresis was evaluated in Synchrotron facility (UVSOR), new excitation band was created around 60 nm.
AB - Positive hysteresis and radiation tolerance to high-dose radiation exposure were investigated for Ce 1% and 3% doped Gd3(Al, Ga) 5O12 (Ce:GAGG) crystal scintillator on comparison with other garnet scintillators such Ce:YAG, Ce:LuAG, Pr:LuAG, and ceramic Ce:GAGG. When they were irradiated by several Gy 60Co γ-rays, Ce 1% doped GAGG crystal exhibited ∼20% light yield enhancement (positive hysteresis). This is the first time to observe positive hysteresis in Ce doped GAGG. On the other hand, other garnet materials did not show the positive hysteresis and their light yields were stable after 800 Gy irradiation except Pr:LuAG. The light yield of Pr:LuAG decreased largely. When irradiated Ce:GAGG which showed positive hysteresis was evaluated in Synchrotron facility (UVSOR), new excitation band was created around 60 nm.
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U2 - 10.1016/j.optmat.2013.12.043
DO - 10.1016/j.optmat.2013.12.043
M3 - Article
AN - SCOPUS:84892411395
SN - 0925-3467
VL - 36
SP - 2016
EP - 2019
JO - Optical Materials
JF - Optical Materials
IS - 12
ER -