Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics

Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

Research output: Contribution to journalArticlepeer-review

90 Citations (Scopus)


The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal-insulator transitions. Metal-insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor channels will enable us to significantly modulate transistor current. However, such gate-controlled metal-insulator transitions have been challenging because of the limited number of electrons accumulated by gate dielectrics, or possible electrochemical reaction in ionic liquid gate. Here we achieve a positive-bias gate-controlled metal-insulator transition near the transition temperature. A significant number of electrons were accumulated via a high-permittivity TiO2 gate dielectric with subnanometre equivalent oxide thickness in the inverse-Schottky-gate geometry. An abrupt transition in the VO2 channel is further exploited, leading to a significant current modulation far beyond the capacitive coupling. This solid-state operation enables us to discuss the electrostatic mechanism as well as the collective nature of gate-controlled metal-insulator transitions, paving the pathway for developing functional field effect transistors.

Original languageEnglish
Article number10104
JournalNature communications
Publication statusPublished - 2015
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Biochemistry,Genetics and Molecular Biology
  • General Physics and Astronomy


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