Positive bias effects on the growth of diamond at pressures below 100 mTorr

K. Teii, T. Yoshida

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15 Citations (Scopus)


An attempt was made to deposit diamond at pressures below 100 mTorr using an inductively coupled plasma. In particular, ion bombardment effects in deposition were investigated by applying positive dc bias to the substrate. The average ion energy impinging onto the substrate was quantified using the sheath potential (Vsheath), i.e. the potential difference between the plasma and the substrate. The low-pressure limit of the growth of diamond with well-defined facet features was depressed to 20 mTorr with a Jsheath value of 2 V, minimizing ion bombardment energy. A Jsheath value of around 11 V still allowed the growth of diamond, however, the amount of deposit decreased and the deposit was composed of smaller crystallites. The results indicate that the growth of diamond at greatly reduced pressures is possible by regulating ion energy and flux, in addition to increasing the radical flux by using high-density plasmas.

Original languageEnglish
Pages (from-to)24-28
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - Mar 21 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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