Position control of nucleation in solid-phase crystallization of a-Si/SiO2 by Ge layer insertion

Taizoh Sadoh; Kei Nagatomo; Isao Tsunoda; Atsushi Kenjo; Masanobu Miyao

doi:10.1557/proc-796-v2.5

Position control of nucleation in solid-phase crystallization of a-Si/SiO₂ by Ge layer insertion

Taizoh Sadoh, Kei Nagatomo, Isao Tsunoda, Atsushi Kenjo, Masanobu Miyao

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Abstract

The effects of Ge layer insertion on the solid-phase crystallization (SPC) of a-Si on SiO₂ have been investigated. Three types of sample structures, i.e., (a) a-Si/a-Ge/a-Si/SiO₂, (b) a-Si/a-Ge/SiO ₂, and (c) SiO₂/a-Ge/a-Si/SiO₂, were prepared and annealed at 600°C. For the structure (a) with a thin (∼ 5 nm) Ge layer, Ge atoms completely diffused into a-Si, and SPC was not enhanced. On the other hand, for the structure (a) with Ge layers thicker than 10 nm, Ge atoms were localized at the initial position. Such a localization of Ge atoms was remarkable for the structures (b) and (c) even for samples with thin Ge layers. For samples with Ge localization, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in the inserted Ge layers, and then propagated into a-Si. The Ge layer insertion can be employed for positioning of crystal nucleation in SPC of a-Si.

Original language	English
Pages (from-to)	39-43
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	796
DOIs	https://doi.org/10.1557/proc-796-v2.5
Publication status	Published - 2003
Event	Critical Interfacial Issues in Thin-Film Optoelectronic and Energy Conversion Devices - Boston, MA, United States Duration: Dec 1 2003 → Dec 3 2003

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-796-v2.5

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title = "Position control of nucleation in solid-phase crystallization of a-Si/SiO2 by Ge layer insertion",

abstract = "The effects of Ge layer insertion on the solid-phase crystallization (SPC) of a-Si on SiO2 have been investigated. Three types of sample structures, i.e., (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO 2, and (c) SiO2/a-Ge/a-Si/SiO2, were prepared and annealed at 600°C. For the structure (a) with a thin (∼ 5 nm) Ge layer, Ge atoms completely diffused into a-Si, and SPC was not enhanced. On the other hand, for the structure (a) with Ge layers thicker than 10 nm, Ge atoms were localized at the initial position. Such a localization of Ge atoms was remarkable for the structures (b) and (c) even for samples with thin Ge layers. For samples with Ge localization, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in the inserted Ge layers, and then propagated into a-Si. The Ge layer insertion can be employed for positioning of crystal nucleation in SPC of a-Si.",

author = "Taizoh Sadoh and Kei Nagatomo and Isao Tsunoda and Atsushi Kenjo and Masanobu Miyao",

year = "2003",

doi = "10.1557/proc-796-v2.5",

language = "English",

volume = "796",

pages = "39--43",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Critical Interfacial Issues in Thin-Film Optoelectronic and Energy Conversion Devices ; Conference date: 01-12-2003 Through 03-12-2003",

}

TY - JOUR

T1 - Position control of nucleation in solid-phase crystallization of a-Si/SiO2 by Ge layer insertion

AU - Sadoh, Taizoh

AU - Nagatomo, Kei

AU - Tsunoda, Isao

AU - Kenjo, Atsushi

AU - Miyao, Masanobu

PY - 2003

Y1 - 2003

N2 - The effects of Ge layer insertion on the solid-phase crystallization (SPC) of a-Si on SiO2 have been investigated. Three types of sample structures, i.e., (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO 2, and (c) SiO2/a-Ge/a-Si/SiO2, were prepared and annealed at 600°C. For the structure (a) with a thin (∼ 5 nm) Ge layer, Ge atoms completely diffused into a-Si, and SPC was not enhanced. On the other hand, for the structure (a) with Ge layers thicker than 10 nm, Ge atoms were localized at the initial position. Such a localization of Ge atoms was remarkable for the structures (b) and (c) even for samples with thin Ge layers. For samples with Ge localization, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in the inserted Ge layers, and then propagated into a-Si. The Ge layer insertion can be employed for positioning of crystal nucleation in SPC of a-Si.

AB - The effects of Ge layer insertion on the solid-phase crystallization (SPC) of a-Si on SiO2 have been investigated. Three types of sample structures, i.e., (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO 2, and (c) SiO2/a-Ge/a-Si/SiO2, were prepared and annealed at 600°C. For the structure (a) with a thin (∼ 5 nm) Ge layer, Ge atoms completely diffused into a-Si, and SPC was not enhanced. On the other hand, for the structure (a) with Ge layers thicker than 10 nm, Ge atoms were localized at the initial position. Such a localization of Ge atoms was remarkable for the structures (b) and (c) even for samples with thin Ge layers. For samples with Ge localization, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in the inserted Ge layers, and then propagated into a-Si. The Ge layer insertion can be employed for positioning of crystal nucleation in SPC of a-Si.

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U2 - 10.1557/proc-796-v2.5

DO - 10.1557/proc-796-v2.5

M3 - Conference article

AN - SCOPUS:2942694172

SN - 0272-9172

VL - 796

SP - 39

EP - 43

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Critical Interfacial Issues in Thin-Film Optoelectronic and Energy Conversion Devices

Y2 - 1 December 2003 through 3 December 2003

ER -

Position control of nucleation in solid-phase crystallization of a-Si/SiO₂ by Ge layer insertion

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