Polycrystalline Si TFTs with Schottky-barrier contacts at source and drain

Junji Shirafuji, Yukinobu Tanida, Takashi Sugino, Reiji Hattori

Research output: Contribution to journalArticlepeer-review


An attempt has been made to fabricate tunnel-injection type poly-crystalline Si thin film transistors (TFTs) with low-resistivity channel layer and Schottky barrier contacts at source and drain. The tunneling current through reverse-biased Schottky contact at the source is controlled by applying gate bias voltage. Although the optimized geometry of the devices is not designed because of limitation of our premature fabrication processes, it is confirmed that the performance similar to those of conventional poly-Si TFTs reported so far is achieved. The equivalent field-effect mobility estimated from FET characteristics is up to 120 cm 2/V·s.

Original languageEnglish
Pages (from-to)195-203
Number of pages9
JournalTechnology Reports of the Osaka University
Issue number2283-2300
Publication statusPublished - Oct 15 1997

All Science Journal Classification (ASJC) codes

  • General Engineering


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