Abstract
Polycrystalline Si (poly-Si) TFTs with Schottky contacts at the source and drain have been fabricated. The Schottky contacts were made of Ni-silicide. Poly-Si films were prepared by using solid phase crystallization. TFTs were fabricated using a high temperature process. The Schottky source/drain contacts were formed by employing the self-aligned silicide (salicide) process. TFTs showed a good switching characteristic having the on/off current ratio of about 7 orders of magnitude. Due to the nature of the Schottky contact it is possible to reduce the kink in drain current.
| Original language | English |
|---|---|
| Pages (from-to) | 443-446 |
| Number of pages | 4 |
| Journal | SID Conference Record of the International Display Research Conference |
| Publication status | Published - 2001 |
| Event | Asia Display/IDW 2001 - Nagoya, Japan Duration: Oct 16 2002 → Oct 19 2002 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering