TY - JOUR
T1 - Plasma induced long-term growth enhancement of Raphanus sativus L. using combinatorial atmospheric air dielectric barrier discharge plasmas
AU - Kitazaki, Satoshi
AU - Sarinont, Thapanut
AU - Koga, Kazunori
AU - Hayashi, Nobuya
AU - Shiratani, Masaharu
N1 - Funding Information:
This work was partly supported by a Grant-in-Aid for Scientific Research on Innovative Areas from the Ministry of Education, Culture, Sports, Science and Technology ( MEXT KAKENHI 24108009 ), and the Japan Society for the Promotion of Science ( JSPS KAKENHI 24340143 ).
PY - 2014/7/24
Y1 - 2014/7/24
N2 - Combinatorial analysis has been carried out to investigate the long-term effects of plasma irradiation of radish seeds on the subsequent sprout growth (Raphanus sativus L.) using atmospheric dielectric barrier discharge plasmas in air. The average seedling length was maximized with 180 s of plasma irradiation when the seed was 5 mm from the electrode edge and 3 mm below the electrode. With these parameters the average seedling length was 250% longer than that not irradiated after three days of cultivation. Observation of the seeds using an infrared (IR) camera and scanning electron microscopy revealed that the temperature rise and etching of the seeds during the plasma irradiation have little effect on growth enhancement. The interaction between radicals and seeds for a duration of 180 s leads to the growth enhancement of radish sprouts for 7 days.
AB - Combinatorial analysis has been carried out to investigate the long-term effects of plasma irradiation of radish seeds on the subsequent sprout growth (Raphanus sativus L.) using atmospheric dielectric barrier discharge plasmas in air. The average seedling length was maximized with 180 s of plasma irradiation when the seed was 5 mm from the electrode edge and 3 mm below the electrode. With these parameters the average seedling length was 250% longer than that not irradiated after three days of cultivation. Observation of the seeds using an infrared (IR) camera and scanning electron microscopy revealed that the temperature rise and etching of the seeds during the plasma irradiation have little effect on growth enhancement. The interaction between radicals and seeds for a duration of 180 s leads to the growth enhancement of radish sprouts for 7 days.
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U2 - 10.1016/j.cap.2013.11.056
DO - 10.1016/j.cap.2013.11.056
M3 - Article
AN - SCOPUS:84904402042
SN - 1567-1739
VL - 14
SP - S149-S153
JO - Current Applied Physics
JF - Current Applied Physics
IS - SUPPL. 2
ER -