Photoreduction Dependent p- and n-Type Semiconducting Field-Effect Transistor Properties in Undoped Reduced Graphene Oxide

Hiroshi Takehira; Md Saidul Islam; Mohammad Razaul Karim; Yuta Shudo; Ryo Ohtani; Leonard F. Lindoy; Takaaki Taniguchi; Minoru Osada; Shinya Hayami

doi:10.1002/slct.201701509

Photoreduction Dependent p- and n-Type Semiconducting Field-Effect Transistor Properties in Undoped Reduced Graphene Oxide

Hiroshi Takehira, Md Saidul Islam, Mohammad Razaul Karim, Yuta Shudo, Ryo Ohtani, Leonard F. Lindoy, Takaaki Taniguchi, Minoru Osada, Shinya Hayami

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Both p- and n-type field effect transistors (FET) properties have been observed in undoped reduced graphene oxide (rGO). Short and long time exposure of GO during photo reduction results in the formation of respective p- and n-type rGO semiconductor. Achieving duel behavior of this type in an undoped material is exceedingly unusual. Herein we report the presence of such behavior in the reduced from of graphene oxide (rGO) for the first time.

Original language	English
Pages (from-to)	6941-6944
Number of pages	4
Journal	ChemistrySelect
Volume	2
Issue number	24
DOIs	https://doi.org/10.1002/slct.201701509
Publication status	Published - Aug 22 2017
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)

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10.1002/slct.201701509

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title = "Photoreduction Dependent p- and n-Type Semiconducting Field-Effect Transistor Properties in Undoped Reduced Graphene Oxide",

abstract = "Both p- and n-type field effect transistors (FET) properties have been observed in undoped reduced graphene oxide (rGO). Short and long time exposure of GO during photo reduction results in the formation of respective p- and n-type rGO semiconductor. Achieving duel behavior of this type in an undoped material is exceedingly unusual. Herein we report the presence of such behavior in the reduced from of graphene oxide (rGO) for the first time.",

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AU - Takehira, Hiroshi

AU - Islam, Md Saidul

AU - Karim, Mohammad Razaul

AU - Shudo, Yuta

AU - Ohtani, Ryo

AU - Lindoy, Leonard F.

AU - Taniguchi, Takaaki

AU - Osada, Minoru

AU - Hayami, Shinya

PY - 2017/8/22

Y1 - 2017/8/22

N2 - Both p- and n-type field effect transistors (FET) properties have been observed in undoped reduced graphene oxide (rGO). Short and long time exposure of GO during photo reduction results in the formation of respective p- and n-type rGO semiconductor. Achieving duel behavior of this type in an undoped material is exceedingly unusual. Herein we report the presence of such behavior in the reduced from of graphene oxide (rGO) for the first time.

AB - Both p- and n-type field effect transistors (FET) properties have been observed in undoped reduced graphene oxide (rGO). Short and long time exposure of GO during photo reduction results in the formation of respective p- and n-type rGO semiconductor. Achieving duel behavior of this type in an undoped material is exceedingly unusual. Herein we report the presence of such behavior in the reduced from of graphene oxide (rGO) for the first time.

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ER -

Photoreduction Dependent p- and n-Type Semiconducting Field-Effect Transistor Properties in Undoped Reduced Graphene Oxide

Abstract

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