Photoluminescence spectra of n-GaSe layered semiconductor doped with Sn

Sh Shigetomi, T. Ikari, H. Nakashima

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    9 Citations (Scopus)

    Abstract

    Radiative recombination mechanisms in n-GaSe doped with Sn have been investigated through photoluminescence (PL) measurements. For samples doped from 0.1 to 0.5 at.%, the PL spectra at 77 K are dominated by the emission band at 1.29 eV. The temperature dependences of the PL intensity, peak energy and full width at half-maximum are characterized using the configuration coordinate model. The 1.29 eV band is associated with the donor-vacancy complex center.

    Original languageEnglish
    Pages (from-to)4291-4292
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Volume35
    Issue number8
    DOIs
    Publication statusPublished - 1996

    All Science Journal Classification (ASJC) codes

    • General Engineering
    • General Physics and Astronomy

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