Photoluminescence properties of β-FeSi2 on Cu- or Au-coated Si

Kensuke Akiyama; Satoru Kaneko; Takeshi Ozawa; Kazuya Yokomizo; Masaru Itakura

Photoluminescence properties of β-FeSi₂ on Cu- or Au-coated Si

Kensuke Akiyama, Satoru Kaneko, Takeshi Ozawa, Kazuya Yokomizo, Masaru Itakura

Materials Physics and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi₂ has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 10⁵ cm^-1 above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi₂ was observed by Cu or Au coating on Si(001). High-crystal-quality β-FeSi₂ with a low-level nonradiative center was formed on a Cu- or Au- reated Si layer. This method of deposition can be applied to other materials requiring high crystal quality.

Original language	English
Pages (from-to)	377-379
Number of pages	3
Journal	World Academy of Science, Engineering and Technology
Volume	50
Publication status	Published - Feb 2011

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

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abstract = "The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative center was formed on a Cu- or Au- reated Si layer. This method of deposition can be applied to other materials requiring high crystal quality.",

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AU - Akiyama, Kensuke

AU - Kaneko, Satoru

AU - Ozawa, Takeshi

AU - Yokomizo, Kazuya

AU - Itakura, Masaru

PY - 2011/2

Y1 - 2011/2

N2 - The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative center was formed on a Cu- or Au- reated Si layer. This method of deposition can be applied to other materials requiring high crystal quality.

AB - The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative center was formed on a Cu- or Au- reated Si layer. This method of deposition can be applied to other materials requiring high crystal quality.

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Photoluminescence properties of β-FeSi₂ on Cu- or Au-coated Si

Abstract

All Science Journal Classification (ASJC) codes

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