Photoluminescence of (Zno)0.82(inn)0.18 films: Incident light angle dependence

Nanoka Miyahara, Kazuya Iwasaki, Daisuke Yamashita, Daisuke Nakamura, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


We have fabricated a new semiconducting material, (ZnO)x(InN)1-x (called ZION hereafter), which is a pseudo-binary alloy of wurtzite ZnO (band gap: 3.4 eV) and wurtzite InN (band gap: 0.7 eV). We have succeeded in fabricating epitaxial (ZnO)0.82(InN)0.18 films on ZnO templates by RF magnetron sputtering. XRD measurements show that the full width at half maximum of the rocking curves from (101) plane and (002) plane are significantly small of 0.11˚ and 0.16˚, respectively, indicating good in-plane and out-of-plane crystal alignment. High crystal quality of the films was also proved by deducing the defect density from XRD analysis showing that the edge type dislocation density is low of 8.2×108 cm-2. Furthermore, we observed room temperature photoluminescence from ZION films as a parameter of incident angle of He-Cd laser light. The results indicate that an emission peak of 2.79 eV is originated from ZION.

Original languageEnglish
Title of host publicationTHERMEC 2018
EditorsR. Shabadi, Mihail Ionescu, M. Jeandin, C. Richard, Tara Chandra
PublisherTrans Tech Publications Ltd
Number of pages5
ISBN (Print)9783035712087
Publication statusPublished - 2018
Event10th International Conference on Processing and Manufacturing of Advanced Materials, 2018 - Paris, France
Duration: Jul 9 2018Jul 13 2018

Publication series

NameMaterials Science Forum
Volume941 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


Conference10th International Conference on Processing and Manufacturing of Advanced Materials, 2018

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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