Photoluminescence of (Zno)0.82(inn)0.18 films: Incident light angle dependence

Nanoka Miyahara; Kazuya Iwasaki; Daisuke Yamashita; Daisuke Nakamura; Hyunwoong Seo; Kazunori Koga; Masaharu Shiratani; Naho Itagaki

doi:10.4028/www.scientific.net/MSF.941.2099

Photoluminescence of (Zno)_0.82(inn)_0.18 films: Incident light angle dependence

Nanoka Miyahara, Kazuya Iwasaki, Daisuke Yamashita, Daisuke Nakamura, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We have fabricated a new semiconducting material, (ZnO)_x(InN)_1-x (called ZION hereafter), which is a pseudo-binary alloy of wurtzite ZnO (band gap: 3.4 eV) and wurtzite InN (band gap: 0.7 eV). We have succeeded in fabricating epitaxial (ZnO)_0.82(InN)_0.18 films on ZnO templates by RF magnetron sputtering. XRD measurements show that the full width at half maximum of the rocking curves from (101) plane and (002) plane are significantly small of 0.11˚ and 0.16˚, respectively, indicating good in-plane and out-of-plane crystal alignment. High crystal quality of the films was also proved by deducing the defect density from XRD analysis showing that the edge type dislocation density is low of 8.2×10⁸ cm^-2. Furthermore, we observed room temperature photoluminescence from ZION films as a parameter of incident angle of He-Cd laser light. The results indicate that an emission peak of 2.79 eV is originated from ZION.

Original language	English
Title of host publication	THERMEC 2018
Editors	R. Shabadi, Mihail Ionescu, M. Jeandin, C. Richard, Tara Chandra
Publisher	Trans Tech Publications Ltd
Pages	2099-2103
Number of pages	5
ISBN (Print)	9783035712087
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.941.2099
Publication status	Published - 2018
Event	10th International Conference on Processing and Manufacturing of Advanced Materials, 2018 - Paris, France Duration: Jul 9 2018 → Jul 13 2018

Publication series

Name	Materials Science Forum
Volume	941 MSF
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	10th International Conference on Processing and Manufacturing of Advanced Materials, 2018
Country/Territory	France
City	Paris
Period	7/9/18 → 7/13/18

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/MSF.941.2099

Cite this

Miyahara, N., Iwasaki, K., Yamashita, D., Nakamura, D., Seo, H., Koga, K., Shiratani, M., & Itagaki, N. (2018). Photoluminescence of (Zno)_0.82(inn)_0.18 films: Incident light angle dependence. In R. Shabadi, M. Ionescu, M. Jeandin, C. Richard, & T. Chandra (Eds.), THERMEC 2018 (pp. 2099-2103). (Materials Science Forum; Vol. 941 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.941.2099

Photoluminescence of (Zno)_0.82(inn)_0.18 films: Incident light angle dependence. / Miyahara, Nanoka; Iwasaki, Kazuya; Yamashita, Daisuke et al.
THERMEC 2018. ed. / R. Shabadi; Mihail Ionescu; M. Jeandin; C. Richard; Tara Chandra. Trans Tech Publications Ltd, 2018. p. 2099-2103 (Materials Science Forum; Vol. 941 MSF).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Miyahara, N, Iwasaki, K, Yamashita, D, Nakamura, D, Seo, H, Koga, K , Shiratani, M & Itagaki, N 2018, Photoluminescence of (Zno)_0.82(inn)_0.18 films: Incident light angle dependence. in R Shabadi, M Ionescu, M Jeandin, C Richard & T Chandra (eds), THERMEC 2018. Materials Science Forum, vol. 941 MSF, Trans Tech Publications Ltd, pp. 2099-2103, 10th International Conference on Processing and Manufacturing of Advanced Materials, 2018, Paris, France, 7/9/18. https://doi.org/10.4028/www.scientific.net/MSF.941.2099

@inproceedings{a57b989420e44adb974c91a8214d2ec1,

title = "Photoluminescence of (Zno)0.82(inn)0.18 films: Incident light angle dependence",

abstract = "We have fabricated a new semiconducting material, (ZnO)x(InN)1-x (called ZION hereafter), which is a pseudo-binary alloy of wurtzite ZnO (band gap: 3.4 eV) and wurtzite InN (band gap: 0.7 eV). We have succeeded in fabricating epitaxial (ZnO)0.82(InN)0.18 films on ZnO templates by RF magnetron sputtering. XRD measurements show that the full width at half maximum of the rocking curves from (101) plane and (002) plane are significantly small of 0.11˚ and 0.16˚, respectively, indicating good in-plane and out-of-plane crystal alignment. High crystal quality of the films was also proved by deducing the defect density from XRD analysis showing that the edge type dislocation density is low of 8.2×108 cm-2. Furthermore, we observed room temperature photoluminescence from ZION films as a parameter of incident angle of He-Cd laser light. The results indicate that an emission peak of 2.79 eV is originated from ZION.",

author = "Nanoka Miyahara and Kazuya Iwasaki and Daisuke Yamashita and Daisuke Nakamura and Hyunwoong Seo and Kazunori Koga and Masaharu Shiratani and Naho Itagaki",

note = "Funding Information: This work was partially supported by JSPS KAKENHI Grant Number JP15H05431, and NTT collaborative research. Publisher Copyright: {\textcopyright} 2018 Trans Tech Publications, Switzerland.; 10th International Conference on Processing and Manufacturing of Advanced Materials, 2018 ; Conference date: 09-07-2018 Through 13-07-2018",

year = "2018",

doi = "10.4028/www.scientific.net/MSF.941.2099",

language = "English",

isbn = "9783035712087",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "2099--2103",

editor = "R. Shabadi and Mihail Ionescu and M. Jeandin and C. Richard and Tara Chandra",

booktitle = "THERMEC 2018",

}

TY - GEN

T1 - Photoluminescence of (Zno)0.82(inn)0.18 films

T2 - 10th International Conference on Processing and Manufacturing of Advanced Materials, 2018

AU - Miyahara, Nanoka

AU - Iwasaki, Kazuya

AU - Yamashita, Daisuke

AU - Nakamura, Daisuke

AU - Seo, Hyunwoong

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Itagaki, Naho

PY - 2018

Y1 - 2018

N2 - We have fabricated a new semiconducting material, (ZnO)x(InN)1-x (called ZION hereafter), which is a pseudo-binary alloy of wurtzite ZnO (band gap: 3.4 eV) and wurtzite InN (band gap: 0.7 eV). We have succeeded in fabricating epitaxial (ZnO)0.82(InN)0.18 films on ZnO templates by RF magnetron sputtering. XRD measurements show that the full width at half maximum of the rocking curves from (101) plane and (002) plane are significantly small of 0.11˚ and 0.16˚, respectively, indicating good in-plane and out-of-plane crystal alignment. High crystal quality of the films was also proved by deducing the defect density from XRD analysis showing that the edge type dislocation density is low of 8.2×108 cm-2. Furthermore, we observed room temperature photoluminescence from ZION films as a parameter of incident angle of He-Cd laser light. The results indicate that an emission peak of 2.79 eV is originated from ZION.

AB - We have fabricated a new semiconducting material, (ZnO)x(InN)1-x (called ZION hereafter), which is a pseudo-binary alloy of wurtzite ZnO (band gap: 3.4 eV) and wurtzite InN (band gap: 0.7 eV). We have succeeded in fabricating epitaxial (ZnO)0.82(InN)0.18 films on ZnO templates by RF magnetron sputtering. XRD measurements show that the full width at half maximum of the rocking curves from (101) plane and (002) plane are significantly small of 0.11˚ and 0.16˚, respectively, indicating good in-plane and out-of-plane crystal alignment. High crystal quality of the films was also proved by deducing the defect density from XRD analysis showing that the edge type dislocation density is low of 8.2×108 cm-2. Furthermore, we observed room temperature photoluminescence from ZION films as a parameter of incident angle of He-Cd laser light. The results indicate that an emission peak of 2.79 eV is originated from ZION.

UR - http://www.scopus.com/inward/record.url?scp=85064087711&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85064087711&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.941.2099

DO - 10.4028/www.scientific.net/MSF.941.2099

M3 - Conference contribution

AN - SCOPUS:85064087711

SN - 9783035712087

T3 - Materials Science Forum

SP - 2099

EP - 2103

BT - THERMEC 2018

A2 - Shabadi, R.

A2 - Ionescu, Mihail

A2 - Jeandin, M.

A2 - Richard, C.

A2 - Chandra, Tara

PB - Trans Tech Publications Ltd

Y2 - 9 July 2018 through 13 July 2018

ER -