Photoluminescence from silicon-chain cluster in poly(dimethylsilane) evaporated film

Reiji Hattori; Takeshi Sugano; Junji Shirafuji

doi:10.1016/S0169-4332(96)00808-2

Photoluminescence from silicon-chain cluster in poly(dimethylsilane) evaporated film

Reiji Hattori, Takeshi Sugano, Junji Shirafuji

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Photoluminescence (PL) and excitation (EX) spectra in epitaxially grown poly(dimethylsilane) (PDMS) films prepared by evaporation have been measured. The epitaxial films are prepared onto mechanically oriented poly(tetrafluoroethylene) (PTFE) layer or onto cleaved surface of alkali halide crystals. The EX peak is located in the lower photon energy tail of the broad absorption (ABS) band; this is explained in terms of the occurrence of energy transfer from short delocalized regions to the longest delocalized regions in silicon main chain and the extremely poor transfer probability. The epitaxially grown films show higher photoluminescence intensity possibly because the existence of an increased number of delocalized regions.

Original language	English
Pages (from-to)	472-475
Number of pages	4
Journal	Applied Surface Science
Volume	113-114
DOIs	https://doi.org/10.1016/S0169-4332(96)00808-2
Publication status	Published - Apr 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(96)00808-2

Cite this

@article{d7d13fd94a6e43788e69d2c8b547590c,

title = "Photoluminescence from silicon-chain cluster in poly(dimethylsilane) evaporated film",

abstract = "Photoluminescence (PL) and excitation (EX) spectra in epitaxially grown poly(dimethylsilane) (PDMS) films prepared by evaporation have been measured. The epitaxial films are prepared onto mechanically oriented poly(tetrafluoroethylene) (PTFE) layer or onto cleaved surface of alkali halide crystals. The EX peak is located in the lower photon energy tail of the broad absorption (ABS) band; this is explained in terms of the occurrence of energy transfer from short delocalized regions to the longest delocalized regions in silicon main chain and the extremely poor transfer probability. The epitaxially grown films show higher photoluminescence intensity possibly because the existence of an increased number of delocalized regions.",

author = "Reiji Hattori and Takeshi Sugano and Junji Shirafuji",

year = "1997",

month = apr,

doi = "10.1016/S0169-4332(96)00808-2",

language = "English",

volume = "113-114",

pages = "472--475",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Photoluminescence from silicon-chain cluster in poly(dimethylsilane) evaporated film

AU - Hattori, Reiji

AU - Sugano, Takeshi

AU - Shirafuji, Junji

PY - 1997/4

Y1 - 1997/4

N2 - Photoluminescence (PL) and excitation (EX) spectra in epitaxially grown poly(dimethylsilane) (PDMS) films prepared by evaporation have been measured. The epitaxial films are prepared onto mechanically oriented poly(tetrafluoroethylene) (PTFE) layer or onto cleaved surface of alkali halide crystals. The EX peak is located in the lower photon energy tail of the broad absorption (ABS) band; this is explained in terms of the occurrence of energy transfer from short delocalized regions to the longest delocalized regions in silicon main chain and the extremely poor transfer probability. The epitaxially grown films show higher photoluminescence intensity possibly because the existence of an increased number of delocalized regions.

AB - Photoluminescence (PL) and excitation (EX) spectra in epitaxially grown poly(dimethylsilane) (PDMS) films prepared by evaporation have been measured. The epitaxial films are prepared onto mechanically oriented poly(tetrafluoroethylene) (PTFE) layer or onto cleaved surface of alkali halide crystals. The EX peak is located in the lower photon energy tail of the broad absorption (ABS) band; this is explained in terms of the occurrence of energy transfer from short delocalized regions to the longest delocalized regions in silicon main chain and the extremely poor transfer probability. The epitaxially grown films show higher photoluminescence intensity possibly because the existence of an increased number of delocalized regions.

UR - http://www.scopus.com/inward/record.url?scp=0031547304&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031547304&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(96)00808-2

DO - 10.1016/S0169-4332(96)00808-2

M3 - Article

AN - SCOPUS:0031547304

SN - 0169-4332

VL - 113-114

SP - 472

EP - 475

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Photoluminescence from silicon-chain cluster in poly(dimethylsilane) evaporated film

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this