TY - JOUR
T1 - Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication
T2 - Temperature ramping process
AU - Wang, Dong
AU - Li, Seiichiro
AU - Nakashima, Hiroshi
AU - Ikeda, Ken Ichi
AU - Nakashima, Hideharu
AU - Matsumoto, Koji
AU - Nakamae, Masahiko
N1 - Funding Information:
This study was supported in part by a Special Coordination Fund for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2006
Y1 - 2006
N2 - Crystal qualities of Si/SiGe/Si-on-insulator structures with different SiGe thicknesses were evaluated by photoluminescence (PL). The wafers were annealed at different temperatures with a ramping rate of 5°C/min. Free exciton PL peaks were clearly observed for the as-grown wafers and decreased with an increase in the annealing temperature. For the annealed wafers, defect-related PL signals were observed at around 0.82, 0.88, 0.95, and 1.0 eV, which varied according to the annealing temperature and the SiGe thickness. They were also correlated to dislocation-related defects by transmission electron microscopy.
AB - Crystal qualities of Si/SiGe/Si-on-insulator structures with different SiGe thicknesses were evaluated by photoluminescence (PL). The wafers were annealed at different temperatures with a ramping rate of 5°C/min. Free exciton PL peaks were clearly observed for the as-grown wafers and decreased with an increase in the annealing temperature. For the annealed wafers, defect-related PL signals were observed at around 0.82, 0.88, 0.95, and 1.0 eV, which varied according to the annealing temperature and the SiGe thickness. They were also correlated to dislocation-related defects by transmission electron microscopy.
UR - http://www.scopus.com/inward/record.url?scp=33746659909&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33746659909&partnerID=8YFLogxK
U2 - 10.1063/1.2240111
DO - 10.1063/1.2240111
M3 - Article
AN - SCOPUS:33746659909
SN - 0003-6951
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
M1 - 041916
ER -