Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions

Dong Wang; Hiroshi Nakashima; Koji Matsumoto; Masahiko Nakamae

doi:10.1063/1.2152109

Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions

Dong Wang, Hiroshi Nakashima, Koji Matsumoto, Masahiko Nakamae

Energy Engineering Sciences

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Photoluminescence (PL) was observed for three strained Si-SiGe-on-insulator wafers with different Ge fractions. The PL signals of wafers with 13% and 18% Ge fractions are deep-level free, implying high wafer qualities. A defect-related broad PL signal could be observed for a wafer with 25% Ge fraction. The dependences of the PL signals as well as the wafer's qualities on Ge fractions were discussed in detail.

Original language	English
Article number	251928
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	25
DOIs	https://doi.org/10.1063/1.2152109
Publication status	Published - 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2152109

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title = "Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions",

abstract = "Photoluminescence (PL) was observed for three strained Si-SiGe-on-insulator wafers with different Ge fractions. The PL signals of wafers with 13% and 18% Ge fractions are deep-level free, implying high wafer qualities. A defect-related broad PL signal could be observed for a wafer with 25% Ge fraction. The dependences of the PL signals as well as the wafer's qualities on Ge fractions were discussed in detail.",

author = "Dong Wang and Hiroshi Nakashima and Koji Matsumoto and Masahiko Nakamae",

note = "Funding Information: This study was partially supported by a Special Coordination Fund for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

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T1 - Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions

AU - Wang, Dong

AU - Nakashima, Hiroshi

AU - Matsumoto, Koji

AU - Nakamae, Masahiko

N1 - Funding Information: This study was partially supported by a Special Coordination Fund for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2005

Y1 - 2005

N2 - Photoluminescence (PL) was observed for three strained Si-SiGe-on-insulator wafers with different Ge fractions. The PL signals of wafers with 13% and 18% Ge fractions are deep-level free, implying high wafer qualities. A defect-related broad PL signal could be observed for a wafer with 25% Ge fraction. The dependences of the PL signals as well as the wafer's qualities on Ge fractions were discussed in detail.

AB - Photoluminescence (PL) was observed for three strained Si-SiGe-on-insulator wafers with different Ge fractions. The PL signals of wafers with 13% and 18% Ge fractions are deep-level free, implying high wafer qualities. A defect-related broad PL signal could be observed for a wafer with 25% Ge fraction. The dependences of the PL signals as well as the wafer's qualities on Ge fractions were discussed in detail.

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JF - Applied Physics Letters

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Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions

Abstract

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