Photodiode properties of epitaxial Pb(Ti, Zr)O3/SrTiO3 ferroelectric heterostructures

Yukio Watanabe; Motochika Okano

doi:10.1063/1.1357807

Photodiode properties of epitaxial Pb(Ti, Zr)O₃/SrTiO₃ ferroelectric heterostructures

Yukio Watanabe, Motochika Okano

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

A substantial photovoltaic effect is found in heterostructures of typical ferroelectric oxides. Pb(Ti, Zr)O₃/Nb-doped SrTiO₃, especially, exhibits current-voltage characteristics of the photovoltaic effect of a typical pn junction (p: hole carrier type, n: electron carrier type). A preliminary nonoptimized device shows high performance such as open circuit voltage of 0.7-0.8 V, external conversion efficiency of 0.6%-0.8%, and response time faster than 20 μs for ultraviolet light at room temperature, suggesting the potential of this diode as a new class of photodiode. The results support the formation of a pn like junction by ferroelectric oxides. Additionally, the photovoltaic characteristics are tuned by the application of short pulse voltages and retained.

Original language	English
Pages (from-to)	1906-1908
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	13
DOIs	https://doi.org/10.1063/1.1357807
Publication status	Published - Mar 26 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/1.1357807

Cite this

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title = "Photodiode properties of epitaxial Pb(Ti, Zr)O3/SrTiO3 ferroelectric heterostructures",

abstract = "A substantial photovoltaic effect is found in heterostructures of typical ferroelectric oxides. Pb(Ti, Zr)O3/Nb-doped SrTiO3, especially, exhibits current-voltage characteristics of the photovoltaic effect of a typical pn junction (p: hole carrier type, n: electron carrier type). A preliminary nonoptimized device shows high performance such as open circuit voltage of 0.7-0.8 V, external conversion efficiency of 0.6%-0.8%, and response time faster than 20 μs for ultraviolet light at room temperature, suggesting the potential of this diode as a new class of photodiode. The results support the formation of a pn like junction by ferroelectric oxides. Additionally, the photovoltaic characteristics are tuned by the application of short pulse voltages and retained.",

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AU - Watanabe, Yukio

AU - Okano, Motochika

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N2 - A substantial photovoltaic effect is found in heterostructures of typical ferroelectric oxides. Pb(Ti, Zr)O3/Nb-doped SrTiO3, especially, exhibits current-voltage characteristics of the photovoltaic effect of a typical pn junction (p: hole carrier type, n: electron carrier type). A preliminary nonoptimized device shows high performance such as open circuit voltage of 0.7-0.8 V, external conversion efficiency of 0.6%-0.8%, and response time faster than 20 μs for ultraviolet light at room temperature, suggesting the potential of this diode as a new class of photodiode. The results support the formation of a pn like junction by ferroelectric oxides. Additionally, the photovoltaic characteristics are tuned by the application of short pulse voltages and retained.

AB - A substantial photovoltaic effect is found in heterostructures of typical ferroelectric oxides. Pb(Ti, Zr)O3/Nb-doped SrTiO3, especially, exhibits current-voltage characteristics of the photovoltaic effect of a typical pn junction (p: hole carrier type, n: electron carrier type). A preliminary nonoptimized device shows high performance such as open circuit voltage of 0.7-0.8 V, external conversion efficiency of 0.6%-0.8%, and response time faster than 20 μs for ultraviolet light at room temperature, suggesting the potential of this diode as a new class of photodiode. The results support the formation of a pn like junction by ferroelectric oxides. Additionally, the photovoltaic characteristics are tuned by the application of short pulse voltages and retained.

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