Photodiode properties of epitaxial Pb(Ti, Zr)O3/SrTiO3 ferroelectric heterostructures

Yukio Watanabe, Motochika Okano

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)


A substantial photovoltaic effect is found in heterostructures of typical ferroelectric oxides. Pb(Ti, Zr)O3/Nb-doped SrTiO3, especially, exhibits current-voltage characteristics of the photovoltaic effect of a typical pn junction (p: hole carrier type, n: electron carrier type). A preliminary nonoptimized device shows high performance such as open circuit voltage of 0.7-0.8 V, external conversion efficiency of 0.6%-0.8%, and response time faster than 20 μs for ultraviolet light at room temperature, suggesting the potential of this diode as a new class of photodiode. The results support the formation of a pn like junction by ferroelectric oxides. Additionally, the photovoltaic characteristics are tuned by the application of short pulse voltages and retained.

Original languageEnglish
Pages (from-to)1906-1908
Number of pages3
JournalApplied Physics Letters
Issue number13
Publication statusPublished - Mar 26 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Photodiode properties of epitaxial Pb(Ti, Zr)O3/SrTiO3 ferroelectric heterostructures'. Together they form a unique fingerprint.

Cite this