Photocarrier generation in σ-bonded organic polysilane

R. Hattori; Y. Aoki; J. Shirafuji

doi:10.1016/0022-3093(93)91234-T

Photocarrier generation in σ-bonded organic polysilane

R. Hattori, Y. Aoki, J. Shirafuji

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The photocarrier generation mechanism in a σ-bonded organic polysilane (methylphenylpolysilane:PMPS) has been studied from photoabsorption, photoconductivity and transient photoresponse measurements. The peak of the photoconductivity spectrum is located at a wavelength longer than that of the photoabsorption spectrum, which is compatible with a model in which the surface recombination lifetime of photocarriers is much shorter than the bulk one. The logarithmic dependence of the photocarrier generation efficiency on the root of the applied field can be explained by one-dimensional geminate recombination process with field-assisted ionization of electron-hole pairs.

Original language	English
Pages (from-to)	1275-1278
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	164-166
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(93)91234-T
Publication status	Published - Dec 2 1993
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(93)91234-T

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title = "Photocarrier generation in σ-bonded organic polysilane",

abstract = "The photocarrier generation mechanism in a σ-bonded organic polysilane (methylphenylpolysilane:PMPS) has been studied from photoabsorption, photoconductivity and transient photoresponse measurements. The peak of the photoconductivity spectrum is located at a wavelength longer than that of the photoabsorption spectrum, which is compatible with a model in which the surface recombination lifetime of photocarriers is much shorter than the bulk one. The logarithmic dependence of the photocarrier generation efficiency on the root of the applied field can be explained by one-dimensional geminate recombination process with field-assisted ionization of electron-hole pairs.",

author = "R. Hattori and Y. Aoki and J. Shirafuji",

year = "1993",

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doi = "10.1016/0022-3093(93)91234-T",

language = "English",

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T1 - Photocarrier generation in σ-bonded organic polysilane

AU - Hattori, R.

AU - Aoki, Y.

AU - Shirafuji, J.

PY - 1993/12/2

Y1 - 1993/12/2

N2 - The photocarrier generation mechanism in a σ-bonded organic polysilane (methylphenylpolysilane:PMPS) has been studied from photoabsorption, photoconductivity and transient photoresponse measurements. The peak of the photoconductivity spectrum is located at a wavelength longer than that of the photoabsorption spectrum, which is compatible with a model in which the surface recombination lifetime of photocarriers is much shorter than the bulk one. The logarithmic dependence of the photocarrier generation efficiency on the root of the applied field can be explained by one-dimensional geminate recombination process with field-assisted ionization of electron-hole pairs.

AB - The photocarrier generation mechanism in a σ-bonded organic polysilane (methylphenylpolysilane:PMPS) has been studied from photoabsorption, photoconductivity and transient photoresponse measurements. The peak of the photoconductivity spectrum is located at a wavelength longer than that of the photoabsorption spectrum, which is compatible with a model in which the surface recombination lifetime of photocarriers is much shorter than the bulk one. The logarithmic dependence of the photocarrier generation efficiency on the root of the applied field can be explained by one-dimensional geminate recombination process with field-assisted ionization of electron-hole pairs.

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Photocarrier generation in σ-bonded organic polysilane

Abstract

All Science Journal Classification (ASJC) codes

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