Abstract
Controlling structural distortions that are closely related to functional properties in transition-metal oxides is a key not only to exploring novel phenomena but also to developing novel oxide-based electronic devices. In this review article, we overview investigations revealing that oxygen displacement at the heterointerface is a key parameter characterizing structure-property relationships of heterostructures. We further demonstrate that the interface engineering of the oxygen displacement is useful to control structural and electronic properties of strained oxides.
Original language | English |
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Pages (from-to) | 10594-10607 |
Number of pages | 14 |
Journal | Dalton Transactions |
Volume | 44 |
Issue number | 23 |
DOIs | |
Publication status | Published - Jun 21 2015 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Inorganic Chemistry