Persistent electronic conduction in 12CaO·7Al2O 3 thin films produced by Ar ion implantation: Selective kick-out effect leads to electride thin films

Masashi Miyakawa; Katsuro Hayashi; Yoshitake Toda; Toshio Kamiya; Masahiro Hirano; Hideo Hosono

doi:10.1557/proc-811-e2.7

Persistent electronic conduction in 12CaO·7Al₂O ₃ thin films produced by Ar ion implantation: Selective kick-out effect leads to electride thin films

Masashi Miyakawa, Katsuro Hayashi, Yoshitake Toda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new method to convert 12CaO·7Al₂O₃ (C12A7) thin films to electronic conductor by hot Ar⁺ ion implantation has been developed and its mechanism is discussed. It was found that hot Ar ⁺ ion implantation extruded free O^2- ions in C12A7 films by kick-out effects at fluences higher than 1×10¹⁷ cm ^-2, which left electrons in the cages embedded in C12A7 crystal and produced high concentration F⁺-like centers (∼1.4×10 ²¹ cm^-3). The resulting films show coloration and persistent electronic conduction with conductivities up to ∼1 Scm ^-1. On the other hand, fluences less than 1×10¹⁷ cm^-2 kept the films transparent and insulating.

Original language	English
Pages (from-to)	385-389
Number of pages	5
Journal	Materials Research Society Symposium Proceedings
Volume	811
DOIs	https://doi.org/10.1557/proc-811-e2.7
Publication status	Published - Jan 1 2004
Externally published	Yes
Event	Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 16 2004

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-811-e2.7

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Persistent electronic conduction in 12CaO·7Al₂O ₃ thin films produced by Ar ion implantation: Selective kick-out effect leads to electride thin films. / Miyakawa, Masashi; Hayashi, Katsuro; Toda, Yoshitake et al.
In: Materials Research Society Symposium Proceedings, Vol. 811, 01.01.2004, p. 385-389.

Research output: Contribution to journal › Conference article › peer-review

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title = "Persistent electronic conduction in 12CaO·7Al2O 3 thin films produced by Ar ion implantation: Selective kick-out effect leads to electride thin films",

abstract = "A new method to convert 12CaO·7Al2O3 (C12A7) thin films to electronic conductor by hot Ar+ ion implantation has been developed and its mechanism is discussed. It was found that hot Ar + ion implantation extruded free O2- ions in C12A7 films by kick-out effects at fluences higher than 1×1017 cm -2, which left electrons in the cages embedded in C12A7 crystal and produced high concentration F+-like centers (∼1.4×10 21 cm-3). The resulting films show coloration and persistent electronic conduction with conductivities up to ∼1 Scm -1. On the other hand, fluences less than 1×1017 cm-2 kept the films transparent and insulating.",

author = "Masashi Miyakawa and Katsuro Hayashi and Yoshitake Toda and Toshio Kamiya and Masahiro Hirano and Hideo Hosono",

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T2 - Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions

AU - Miyakawa, Masashi

AU - Hayashi, Katsuro

AU - Toda, Yoshitake

AU - Kamiya, Toshio

AU - Hirano, Masahiro

AU - Hosono, Hideo

PY - 2004/1/1

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N2 - A new method to convert 12CaO·7Al2O3 (C12A7) thin films to electronic conductor by hot Ar+ ion implantation has been developed and its mechanism is discussed. It was found that hot Ar + ion implantation extruded free O2- ions in C12A7 films by kick-out effects at fluences higher than 1×1017 cm -2, which left electrons in the cages embedded in C12A7 crystal and produced high concentration F+-like centers (∼1.4×10 21 cm-3). The resulting films show coloration and persistent electronic conduction with conductivities up to ∼1 Scm -1. On the other hand, fluences less than 1×1017 cm-2 kept the films transparent and insulating.

AB - A new method to convert 12CaO·7Al2O3 (C12A7) thin films to electronic conductor by hot Ar+ ion implantation has been developed and its mechanism is discussed. It was found that hot Ar + ion implantation extruded free O2- ions in C12A7 films by kick-out effects at fluences higher than 1×1017 cm -2, which left electrons in the cages embedded in C12A7 crystal and produced high concentration F+-like centers (∼1.4×10 21 cm-3). The resulting films show coloration and persistent electronic conduction with conductivities up to ∼1 Scm -1. On the other hand, fluences less than 1×1017 cm-2 kept the films transparent and insulating.

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Persistent electronic conduction in 12CaO·7Al₂O ₃ thin films produced by Ar ion implantation: Selective kick-out effect leads to electride thin films

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