Perovskite/Black Phosphorus/MoS 2 Photogate Reversed Photodiodes with Ultrahigh Light On/Off Ratio and Fast Response

Liming Wang, Xuming Zou, Jun Lin, Jiayang Jiang, Yuan Liu, Xingqiang Liu, Xu Zhao, Yu Fang Liu, Johnny C. Ho, Lei Liao

Research output: Contribution to journalArticlepeer-review

78 Citations (Scopus)


As compared with epitaxial semiconductor devices, two-dimensional (2D) heterostructures offer alternative facile platforms for many optoelectronic devices. Among them, photovoltaic based photodetectors can give fast response, while the photogate devices can lead to high responsivity. Here, we report a 2D photogate photodiode, which combines the benefits of 2D black phosphorus/MoS 2 photodiodes with the emerging potential of perovskite, to achieve both fast response and high responsivity. This device architecture is constructed based on the fast photovoltaic operation together with the high-gain photogating effect. Under reverse bias condition, the device exhibits high responsivity (11 A/W), impressive detectivity (1.3 × 10 12 Jones), fast response (150/240 μs), and low dark current (3 × 10 -11 A). All these results are already much better in nearly all aspects of performance than the previously reported 2D photodiodes operating in reverse bias, achieving the optimal balance between all figure-of-merits. Importantly, with a zero bias, the device can also yield high detectivity (3 × 10 11 Jones), ultrahigh light on/off ratio (3 × 10 7 ), and extremely high external quantum efficiency (80%). This device architecture thus has a promise for high-efficiency photodetection and photovoltaic energy conversion.

Original languageEnglish
Pages (from-to)4804-4813
Number of pages10
JournalACS nano
Issue number4
Publication statusPublished - Apr 23 2019
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


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