Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2 Transistors

Zhenyu Yang, Xingqiang Liu, Xuming Zou, Jingli Wang, Chao Ma, Changzhong Jiang, Johnny C. Ho, Caofeng Pan, Xiangheng Xiao, Jie Xiong, Lei Liao

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)


In order to realize the promising potential of MoS2 as the alternative channel material, it is essential to achieve high-performance top-gated MoS2 field-effect transistors (FETs), especially since the back-gated counterparts cannot control the device individually. Although uniform high-k dielectric films, such as HfO2, can be obtained through the introduction of artificial nucleation sites on the MoS2 channel to fabricate top-gated FETs, this would inevitably degrade their channel/dielectric interface quality, induce significant charged impurity scattering and lower carrier mobility. In this work, MoS2 FETs are fabricated using a self-aligned nanowire top-gate, which can effectively reduce the charged impurity scattering on the surface of MoS2. Specifically, the fabricated short-channel devices exhibit impressive electrical performances, such as the high on/off current ratio, low interface trap density, and near-ideal subthreshold slope at room temperature. In addition, the short channel effect is systematically analyzed, which indicates that the phonon scattering can be the dominant scattering mechanism in the devices when the amount of charged impurities is effectively reduced with the self-aligned nanowire gate. All these provide an enhanced fabrication scheme to attain top-gated short-channel devices with the optimized interface and potentially to explore their corresponding performance limits.

Original languageEnglish
Article number1602250
JournalAdvanced Functional Materials
Issue number19
Publication statusPublished - May 18 2017
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


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