Patterning by laser annealing of complementary inverters based on a solution-processible ambipolar quinoidal oligothiophene

Spatial control of the ambipolar charge transport properties in organic thin films made from the solution-processible dicyanomethylene-substituted quinoidal quaterthiophene [QQT(CN)4] can be achieved by direct laser writing. Here we report on the laser patterning and the electrical characterization of QQT(CN)4-based complementary metal oxide semiconductor (CMOS) inverters. Ambipolar p-type dominant organic field-effect transistors are combined with laser-converted n-type devices in single QQT(CN)4 organic thin films using top-contact configuration. Influence of the gate dielectric on the electrical response of these logic circuits is discussed and taken into account for an optimization of their performance. Solution-processed organic inverters with enhanced gain as high as 15 and improved on- and off-states are successfully fabricated, confirming the potential of QQT(CN)4 for high performance purely CMOS organic integrated circuits.