Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn

Alexandra C. Ford, Steven Chuang, Johnny C. Ho, Yu Lun Chueh, Zhiyong Fan, Ali Javey

Research output: Contribution to journalArticlepeer-review

53 Citations (Scopus)


Gas phase p-doping of InAs nanowires with Zn atoms is demonstrated as an effective route for enabling postgrowth dopant profiling of nanostructures. The versatility of the approach is demonstrated by the fabrication of high-performance gated diodes and p-MOSFETs. High Zn concentrations with electrically active content of ̃1× 1019 cm-3 are achieved which is essential for compensating the electron-rich surface layers of InAs to enable heavily p-doped structures. This work could have important practical implications for the fabrication of planar and nonplanar devices based on InAs and other III-V nanostructures which are not compatible with conventional ion implantation processes that often cause severe lattice damage with local stoichiometry imbalance.

Original languageEnglish
Pages (from-to)509-513
Number of pages5
JournalNano Letters
Issue number2
Publication statusPublished - Feb 10 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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