Patterned growth of graphene over epitaxial catalyst

Hiroki Ago, Izumi Tanaka, Carlo M. Orofeo, Masaharu Tsuji, Ken Ichi Ikeda

    Research output: Contribution to journalArticlepeer-review

    40 Citations (Scopus)


    Rectangle- and triangle-shaped microscale graphene films are grown on epitaxial Co films deposited on single-crystal MgO substrates with (001) and (111) planes, respectively. A thin film of Co or Ni metal is epitaxially deposited on a MgO substrate by sputtering while heating the substrate. Thermal decomposition of polystyrene over this epitaxial metal film in vacuum gives rectangular or triangular pit structures whose orientation and shape are strongly dependent on the crystallographic orientation of the MgO substrate. Raman mapping measurements indicate preferential formation of few-layer graphene films inside these pits. The rectangular graphene films are transferred onto a SiO2/Si substrate while maintaining the original shape and field-effect transistors are fabricated using the transferred films. These findings on the formation of rectangular/triangular graphene give new insights on the formation mechanism of graphene and can be applied for more advanced/controlled graphene growth.

    Original languageEnglish
    Pages (from-to)1226-1233
    Number of pages8
    Issue number11
    Publication statusPublished - Jun 6 2010

    All Science Journal Classification (ASJC) codes

    • Biotechnology
    • Biomaterials
    • General Chemistry
    • General Materials Science


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