p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene)

Hiroshi Kayashima; Takeshi Yasuda; Katsuhiko Fujita; Tetsuo Tsutsui

p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene)

Hiroshi Kayashima
, Takeshi Yasuda
, Katsuhiko Fujita
, Tetsuo Tsutsui

Department of Advanced Device Materials

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Poly(p-phenylenevinylene) (PPV) thin films were prepared by using drop casting under high gravity condition in a centrifuge and PPV based field effect transistors (FET) were fabricated. PPV FETs with gold source-drain electrodes showed the p-channel characteristics. The field-effect hole mobility was improved to 8.8×10^-4Cm²V^-1s^-1 by thermal treatment. PPV FET with calcium source-drain electrodes showed the n-channel characteristics and the field-effect electron mobility was 1.0×10^-6cm²V^-1s^-1.

Original language	English
Title of host publication	Organic Electronics
Subtitle of host publication	Materials, Devices and Applications
Pages	306-311
Number of pages	6
Publication status	Published - 2006
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: Nov 27 2006 → Dec 1 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	965
ISSN (Print)	0272-9172

Other

Other	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/27/06 → 12/1/06

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene). / Kayashima, Hiroshi; Yasuda, Takeshi; Fujita, Katsuhiko et al.
Organic Electronics: Materials, Devices and Applications. 2006. p. 306-311 (Materials Research Society Symposium Proceedings; Vol. 965).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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title = "p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene)",

abstract = "Poly(p-phenylenevinylene) (PPV) thin films were prepared by using drop casting under high gravity condition in a centrifuge and PPV based field effect transistors (FET) were fabricated. PPV FETs with gold source-drain electrodes showed the p-channel characteristics. The field-effect hole mobility was improved to 8.8×10-4Cm2V-1s-1 by thermal treatment. PPV FET with calcium source-drain electrodes showed the n-channel characteristics and the field-effect electron mobility was 1.0×10-6cm2V-1s-1.",

author = "Hiroshi Kayashima and Takeshi Yasuda and Katsuhiko Fujita and Tetsuo Tsutsui",

year = "2006",

language = "English",

isbn = "9781604234176",

series = "Materials Research Society Symposium Proceedings",

pages = "306--311",

booktitle = "Organic Electronics",

note = "2006 MRS Fall Meeting ; Conference date: 27-11-2006 Through 01-12-2006",

}

TY - GEN

T1 - p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene)

AU - Kayashima, Hiroshi

AU - Yasuda, Takeshi

AU - Fujita, Katsuhiko

AU - Tsutsui, Tetsuo

PY - 2006

Y1 - 2006

N2 - Poly(p-phenylenevinylene) (PPV) thin films were prepared by using drop casting under high gravity condition in a centrifuge and PPV based field effect transistors (FET) were fabricated. PPV FETs with gold source-drain electrodes showed the p-channel characteristics. The field-effect hole mobility was improved to 8.8×10-4Cm2V-1s-1 by thermal treatment. PPV FET with calcium source-drain electrodes showed the n-channel characteristics and the field-effect electron mobility was 1.0×10-6cm2V-1s-1.

AB - Poly(p-phenylenevinylene) (PPV) thin films were prepared by using drop casting under high gravity condition in a centrifuge and PPV based field effect transistors (FET) were fabricated. PPV FETs with gold source-drain electrodes showed the p-channel characteristics. The field-effect hole mobility was improved to 8.8×10-4Cm2V-1s-1 by thermal treatment. PPV FET with calcium source-drain electrodes showed the n-channel characteristics and the field-effect electron mobility was 1.0×10-6cm2V-1s-1.

UR - https://www.scopus.com/pages/publications/40949090102

UR - https://www.scopus.com/pages/publications/40949090102#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:40949090102

SN - 9781604234176

T3 - Materials Research Society Symposium Proceedings

SP - 306

EP - 311

BT - Organic Electronics

T2 - 2006 MRS Fall Meeting

Y2 - 27 November 2006 through 1 December 2006

ER -

p-and n-type charge transport in field-effect transistors of pristine poly(p-phenylenevinylene)

Abstract

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All Science Journal Classification (ASJC) codes

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