Abstract
Silicon single crystals were grown in crucibles with and without a carbon sheet at the bottom to investigate how oxygen dissociates from the crucible and transfers to the crystals. Oxygen concentration in the crystals grown in the sheet-attached crucible was lower than that of crystals grown in the sheetless crucible when crucible rotation rate was high. A three-dimensional numerical simulation clarified that with a high crucible rotation rate, about 20% of the oxygen in the grown crystals was transferred by convection in the melt from the bottom of the crucible. For a low crucible rotation rate, a melt with a small oxygen concentration was directly transferred from the gas-melt interface to the crystal-melt interface; therefore, oxygen concentration in crystals grown at a low crucible rotation rate was lower than that for crystals grown at a high rotation rate.
| Original language | English |
|---|---|
| Pages (from-to) | 358-361 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 165 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Aug 1996 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry