Oxygen transport mechanism in Si melt during single crystal growth in the Czochralski system

Kyung Woo Yi, Koichi Kakimoto, Minoru Eguchi, Hiroshi Noguchi

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


Silicon single crystals were grown in crucibles with and without a carbon sheet at the bottom to investigate how oxygen dissociates from the crucible and transfers to the crystals. Oxygen concentration in the crystals grown in the sheet-attached crucible was lower than that of crystals grown in the sheetless crucible when crucible rotation rate was high. A three-dimensional numerical simulation clarified that with a high crucible rotation rate, about 20% of the oxygen in the grown crystals was transferred by convection in the melt from the bottom of the crucible. For a low crucible rotation rate, a melt with a small oxygen concentration was directly transferred from the gas-melt interface to the crystal-melt interface; therefore, oxygen concentration in crystals grown at a low crucible rotation rate was lower than that for crystals grown at a high rotation rate.

Original languageEnglish
Pages (from-to)358-361
Number of pages4
JournalJournal of Crystal Growth
Issue number4
Publication statusPublished - Aug 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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