Oxygen tracer diffusion in a-axis oriented ZnO thin films grown on (011 2) sapphire by pulsed laser deposition

Isao Sakaguchi; Ken Watanabe; Yutaka Adachi; Takeshi Ohgaki; Shunichi Hishita; Naoki Ohashi; Hajime Haneda

doi:10.4028/www.scientific.net/KEM.566.266

Oxygen tracer diffusion in a-axis oriented ZnO thin films grown on (011 2) sapphire by pulsed laser deposition

Isao Sakaguchi, Ken Watanabe, Yutaka Adachi, Takeshi Ohgaki, Shunichi Hishita, Naoki Ohashi, Hajime Haneda

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The a-axis oriented ZnO thin films deposited on (011 2) sapphire substrates by pulsed laser deposition were studied to investigate the effects of pre-annealing on oxygen diffusion. The effect was as follows: the oxygen diffusion coefficient decreased, and the oxygen concentration in the tailing regions of the profiles reduced. Ion images of an oxygen tracer revealed the high-diffusivity paths for oxygen tracer diffusion. The temperature dependence of oxygen tracer diffusion coefficients (D_b) in as-deposited and pre-annealed thin films were determined to be D_b [cm²/s] = 9.2×10² exp (-405 [kJ/mol] / RT) and D_b [cm ²/s] = 1.8×10³ exp (- 418 [kJ/mol] / RT), respectively. On basis of these results, the crystal orientation on D _b and the mechanism for oxygen diffusion were discussed.

Original language	English
Title of host publication	Electroceramics in Japan XV
Publisher	Trans Tech Publications Ltd
Pages	266-270
Number of pages	5
ISBN (Print)	9783037857618
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.566.266
Publication status	Published - 2013
Externally published	Yes
Event	31st Electronics Division Meeting of the Ceramic Society of Japan - Tokyo, Japan Duration: Oct 28 2011 → Oct 29 2011

Publication series

Name	Key Engineering Materials
Volume	566
ISSN (Print)	1013-9826
ISSN (Electronic)	1662-9795

Other

Other	31st Electronics Division Meeting of the Ceramic Society of Japan
Country/Territory	Japan
City	Tokyo
Period	10/28/11 → 10/29/11

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/KEM.566.266

Cite this

Sakaguchi, I., Watanabe, K., Adachi, Y., Ohgaki, T., Hishita, S., Ohashi, N., & Haneda, H. (2013). Oxygen tracer diffusion in a-axis oriented ZnO thin films grown on (011 2) sapphire by pulsed laser deposition. In Electroceramics in Japan XV (pp. 266-270). (Key Engineering Materials; Vol. 566). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.566.266

Oxygen tracer diffusion in a-axis oriented ZnO thin films grown on (011 2) sapphire by pulsed laser deposition. / Sakaguchi, Isao; Watanabe, Ken; Adachi, Yutaka et al.
Electroceramics in Japan XV. Trans Tech Publications Ltd, 2013. p. 266-270 (Key Engineering Materials; Vol. 566).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sakaguchi, I, Watanabe, K, Adachi, Y, Ohgaki, T, Hishita, S, Ohashi, N & Haneda, H 2013, Oxygen tracer diffusion in a-axis oriented ZnO thin films grown on (011 2) sapphire by pulsed laser deposition. in Electroceramics in Japan XV. Key Engineering Materials, vol. 566, Trans Tech Publications Ltd, pp. 266-270, 31st Electronics Division Meeting of the Ceramic Society of Japan, Tokyo, Japan, 10/28/11. https://doi.org/10.4028/www.scientific.net/KEM.566.266

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abstract = "The a-axis oriented ZnO thin films deposited on (011 2) sapphire substrates by pulsed laser deposition were studied to investigate the effects of pre-annealing on oxygen diffusion. The effect was as follows: the oxygen diffusion coefficient decreased, and the oxygen concentration in the tailing regions of the profiles reduced. Ion images of an oxygen tracer revealed the high-diffusivity paths for oxygen tracer diffusion. The temperature dependence of oxygen tracer diffusion coefficients (Db) in as-deposited and pre-annealed thin films were determined to be Db [cm2/s] = 9.2×102 exp (-405 [kJ/mol] / RT) and Db [cm 2/s] = 1.8×103 exp (- 418 [kJ/mol] / RT), respectively. On basis of these results, the crystal orientation on D b and the mechanism for oxygen diffusion were discussed.",

author = "Isao Sakaguchi and Ken Watanabe and Yutaka Adachi and Takeshi Ohgaki and Shunichi Hishita and Naoki Ohashi and Hajime Haneda",

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AU - Ohgaki, Takeshi

AU - Hishita, Shunichi

AU - Ohashi, Naoki

AU - Haneda, Hajime

PY - 2013

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N2 - The a-axis oriented ZnO thin films deposited on (011 2) sapphire substrates by pulsed laser deposition were studied to investigate the effects of pre-annealing on oxygen diffusion. The effect was as follows: the oxygen diffusion coefficient decreased, and the oxygen concentration in the tailing regions of the profiles reduced. Ion images of an oxygen tracer revealed the high-diffusivity paths for oxygen tracer diffusion. The temperature dependence of oxygen tracer diffusion coefficients (Db) in as-deposited and pre-annealed thin films were determined to be Db [cm2/s] = 9.2×102 exp (-405 [kJ/mol] / RT) and Db [cm 2/s] = 1.8×103 exp (- 418 [kJ/mol] / RT), respectively. On basis of these results, the crystal orientation on D b and the mechanism for oxygen diffusion were discussed.

AB - The a-axis oriented ZnO thin films deposited on (011 2) sapphire substrates by pulsed laser deposition were studied to investigate the effects of pre-annealing on oxygen diffusion. The effect was as follows: the oxygen diffusion coefficient decreased, and the oxygen concentration in the tailing regions of the profiles reduced. Ion images of an oxygen tracer revealed the high-diffusivity paths for oxygen tracer diffusion. The temperature dependence of oxygen tracer diffusion coefficients (Db) in as-deposited and pre-annealed thin films were determined to be Db [cm2/s] = 9.2×102 exp (-405 [kJ/mol] / RT) and Db [cm 2/s] = 1.8×103 exp (- 418 [kJ/mol] / RT), respectively. On basis of these results, the crystal orientation on D b and the mechanism for oxygen diffusion were discussed.

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Oxygen tracer diffusion in a-axis oriented ZnO thin films grown on (011 2) sapphire by pulsed laser deposition

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