Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields

K. Kakimoto

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33 Citations (Scopus)


This paper aims to report an effect on inhomogeneous transverse-magnetic fields to melt convection and oxygen distribution in silicon melt and at a solid-liquid interface during single crystal growth. The inhomogeneous transverse-magnetic fields were obtained by the calculation based on Biot-Savart equation with an assumption of finite-diameter solenoids. We studied how Lorenz force, which was formed by the inhomogeneous magnetic fields, modified convection of the melt and oxygen transfer as a function of relative position between the solenoids and the melt. We showed the possibility that oxygen concentration in the melt and near the solid-liquid interface can be controlled by relative position between the melt and the inhomogeneous transverse-magnetic fields. We discuss the effects of Lorenz force and electric potential distributions on the melt and oxygen transfer on the basis of calculated results obtained by three-dimensional and time-dependent calculation.

Original languageEnglish
Pages (from-to)100-107
Number of pages8
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - Aug 2001

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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