Oxide ionic and electronic conduction in Ni-doped LaGaO3-based oxide

Tatsumi Ishihara, Shinji Ishikawa, Kei Hosoi, Hiroyasu Nishiguchi, Yusaku Takita

    Research output: Contribution to journalConference articlepeer-review

    19 Citations (Scopus)

    Abstract

    Partial electronic conduction in Ni-doped LaGaO3-based oxide was investigated by using the ion-blocking method. It was seen that the hole and the electronic conduction originated from doped Ni becomes dominant with decreasing temperature and also with increasing Ni content. PO2 dependences of hole and electronic conduction decrease with increasing Ni content and it becomes almost PO2-1-12 and P O2-1/12, respectively, at 1073 K when 10 mol% Ni is doped to Ga site. The estimated transport number of oxide ion in Ni-doped LaGaO 3 is always higher than 0.95 in PO2 range from 1 to 10-21 atm, which is the important PO2 range for fuel cell application. Therefore, the main charge carrier is still oxide ion in Ni-doped LaGaO3- Comparing with the partial electronic conduction in Co-doped sample, the electrolyte domain is wider on Ni-doped sample.

    Original languageEnglish
    Pages (from-to)319-322
    Number of pages4
    JournalSolid State Ionics
    Volume175
    Issue number1-4
    DOIs
    Publication statusPublished - Nov 30 2004
    EventFourteenth International Conference on Solid State Ionics - Monterey, CA., United States
    Duration: Jun 22 2003Jun 27 2003

    All Science Journal Classification (ASJC) codes

    • General Chemistry
    • General Materials Science
    • Condensed Matter Physics

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