TY - JOUR
T1 - Over 12000 A/cm2 and 3.2 mΩcm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET
AU - Iwataki, Masayuki
AU - Oi, Nobutaka
AU - Horikawa, Kiyotaka
AU - Amano, Shotaro
AU - Nishimura, Jun
AU - Kageura, Taisuke
AU - Inaba, Masafumi
AU - Hiraiwa, Atsushi
AU - Kawarada, Hiroshi
N1 - Funding Information:
Manuscript received October 21, 2019; revised November 11, 2019; accepted November 11, 2019. Date of publication November 15, 2019; date of current version December 27, 2019. This work was supported in part by the JSPS Grant-in-Aid for Scientific Research (S) under Grant JP26220903 and in part by the Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development. The review of this letter was arranged by Editor G. Han. (Corresponding author: Masayuki Iwataki.) M. Iwataki, N. Oi, K. Horikawa, S. Amano, J. Nishimura, T. Kageura, and M. Inaba are with the Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan.
Publisher Copyright:
© 2019 IEEE.
PY - 2020/1
Y1 - 2020/1
N2 - We present a miniaturized vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting a gate-source overlapping structure. We developed a 2μm-wide trench and disposed a part of the gate electrode to overlap the Al2O3 insulator film on the source electrode to eliminate the space between source and gate electrode. We obtained the maximum drain current density of ID =12800 A/cm2 at VDS =-50 V and the specific on-resistance of RON =3.2 m}Ω cm2 at VDS =-10 V and confirmed their improvement by the miniaturization of devices and reduction of source to gate resistance. In addition, the drain current on/off ratio was 7 orders magnitude even at 200 °C with the formation of a highly concentrated, thick nitrogen-doped layer as the current blocking layer.
AB - We present a miniaturized vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting a gate-source overlapping structure. We developed a 2μm-wide trench and disposed a part of the gate electrode to overlap the Al2O3 insulator film on the source electrode to eliminate the space between source and gate electrode. We obtained the maximum drain current density of ID =12800 A/cm2 at VDS =-50 V and the specific on-resistance of RON =3.2 m}Ω cm2 at VDS =-10 V and confirmed their improvement by the miniaturization of devices and reduction of source to gate resistance. In addition, the drain current on/off ratio was 7 orders magnitude even at 200 °C with the formation of a highly concentrated, thick nitrogen-doped layer as the current blocking layer.
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U2 - 10.1109/LED.2019.2953693
DO - 10.1109/LED.2019.2953693
M3 - Article
AN - SCOPUS:85077811705
SN - 0741-3106
VL - 41
SP - 111
EP - 114
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 1
M1 - 8902031
ER -