Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in Homoepitaxial growth

Integration of Ge on the Si platforms is essential for the development of next generation large-scale integrated circuits. The Ge-on-insulator (GOI) structure is suited for the realization of high-mobility transistors channels and as epitaxial templates for optoelectronic and spintronic materials. In this work, the fabrication of thin (∼50 nm) (100) GOI by the rapid melting growth process has been investigated. Growth with unstable crystal orientation has been observed in wide (≥1 μm) GOI strips. However, orientation stabilized growth was achieved in narrow strips (∼0.5 μm). Further stabilization of growth orientation was observed in mesh patterned growth with GOI width of 1 μm. Epitaxial growth of Ge was performed on the above structures and the formation of uniform epitaxial layer was demonstrated.