Orientation control of metalorganic chemical vapor deposition-Bi4Ti3O12 thin film by sequential source gas supply method

Takayuki Watanabe; Hiroshi Funakubo

doi:10.1143/jjap.39.5211

Orientation control of metalorganic chemical vapor deposition-Bi₄Ti₃O₁₂ thin film by sequential source gas supply method

Takayuki Watanabe, Hiroshi Funakubo

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

C-axis-oriented Bi₄Ti₃O₁₂ thin films were prepared on (111)Pt/Ti/SiO₂/Si substrates by metalorganic chemical vapor deposition (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi₄Ti₃O₁₂ along the c-axis. The X-ray diffraction intensities of Bi₄Ti₃O₁₂(006) and Bi₄Ti₃O₁₂(117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c-axis-oriented Bi₄Ti₃O₁₂ film, and the supply corresponding to a half unit cell per sequence showed high c-axis orientation.

Original language	English
Pages (from-to)	5211-5216
Number of pages	6
Journal	Japanese Journal of Applied Physics
Volume	39
Issue number	9 A
DOIs	https://doi.org/10.1143/jjap.39.5211
Publication status	Published - Sept 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Orientation control of metalorganic chemical vapor deposition-Bi4Ti3O12 thin film by sequential source gas supply method",

abstract = "C-axis-oriented Bi4Ti3O12 thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi4Ti3O12 along the c-axis. The X-ray diffraction intensities of Bi4Ti3O12(006) and Bi4Ti3O12(117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c-axis-oriented Bi4Ti3O12 film, and the supply corresponding to a half unit cell per sequence showed high c-axis orientation.",

author = "Takayuki Watanabe and Hiroshi Funakubo",

year = "2000",

month = sep,

doi = "10.1143/jjap.39.5211",

language = "English",

volume = "39",

pages = "5211--5216",

journal = "Japanese Journal of Applied Physics",

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publisher = "The Japan Society of Applied Physics",

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T1 - Orientation control of metalorganic chemical vapor deposition-Bi4Ti3O12 thin film by sequential source gas supply method

AU - Watanabe, Takayuki

AU - Funakubo, Hiroshi

PY - 2000/9

Y1 - 2000/9

N2 - C-axis-oriented Bi4Ti3O12 thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi4Ti3O12 along the c-axis. The X-ray diffraction intensities of Bi4Ti3O12(006) and Bi4Ti3O12(117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c-axis-oriented Bi4Ti3O12 film, and the supply corresponding to a half unit cell per sequence showed high c-axis orientation.

AB - C-axis-oriented Bi4Ti3O12 thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi4Ti3O12 along the c-axis. The X-ray diffraction intensities of Bi4Ti3O12(006) and Bi4Ti3O12(117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c-axis-oriented Bi4Ti3O12 film, and the supply corresponding to a half unit cell per sequence showed high c-axis orientation.

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Orientation control of metalorganic chemical vapor deposition-Bi₄Ti₃O₁₂ thin film by sequential source gas supply method

Abstract

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