TY - GEN
T1 - Organic light-emitting transistors
AU - Oyamada, Takahito
AU - Uchiuzo, Hiroyuki
AU - Shimoji, Noriyuki
AU - Matsushige, Kazumi
AU - Sasabe, Hiroyuki
AU - Adachi, Chihaya
N1 - Funding Information:
We would like to thank Prof. M. Nakamura, Dr. M. Iizuka, and Mr. S. Tanaka for useful discussions. This work was partially supported by a Grant-in-Aid for Scientific Research (No. 14390012) from the Ministry of Education, Science, Sports and Culture of Japan.
PY - 2005
Y1 - 2005
N2 - We succeeded in observing electroluminescence (EL) of Tetraphenylpyrene (TPPy) as an active layer in an organic field-effect transistor (OFET). In particular, an OFET with a short channel of dSD<1.0μm demonstrated higher EL efficiency than one with a much longer channel (dSD>10μm). We observed a maximum EL quantum efficiency (ηmax) of ∼0.3% in the short-channel-length device at an applied source-drain voltage of Vd∼-100 V and a gate voltage of Vg>-50 V. From the OFET characteristics, although the TPPy layer demonstrated typical p-type operation, the occurrence of EL clearly indicated simultaneous hole and electron injection from the source and drain electronics, respectively, under high Vd and Vg.
AB - We succeeded in observing electroluminescence (EL) of Tetraphenylpyrene (TPPy) as an active layer in an organic field-effect transistor (OFET). In particular, an OFET with a short channel of dSD<1.0μm demonstrated higher EL efficiency than one with a much longer channel (dSD>10μm). We observed a maximum EL quantum efficiency (ηmax) of ∼0.3% in the short-channel-length device at an applied source-drain voltage of Vd∼-100 V and a gate voltage of Vg>-50 V. From the OFET characteristics, although the TPPy layer demonstrated typical p-type operation, the occurrence of EL clearly indicated simultaneous hole and electron injection from the source and drain electronics, respectively, under high Vd and Vg.
UR - http://www.scopus.com/inward/record.url?scp=33644645088&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33644645088&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33644645088
SN - 9572852221
T3 - International Display Manufacturing Conference and Exhibition, IDMC'05
SP - 269
EP - 270
BT - Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
A2 - David Shieh, H.P.
A2 - Chen, F.C.
T2 - International Display Manufacturing Conference and Exhibition, IDMC'05
Y2 - 21 February 2005 through 24 February 2005
ER -