Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye

J. C. Ribierre, M. Sato, A. Ishizuka, T. Tanaka, S. Watanabe, M. Matsumoto, S. Matsumoto, M. Uchiyama, T. Aoyama

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


We report on the fabrication and the characterization of p-type organic field-effect transistors based on vapor-deposited J-aggregate bisazomethine dye thin films. The absorption spectra of this non-ionic organic semiconductor in the solid state show a strong influence of the film thickness on the J-aggregate formation. However, the electrical characteristics of the devices demonstrate that the hole transport properties do not vary significantly in films thicker than 100 nm. This is due to the fact that the J-aggregates are formed in this material at the surface of the crystalline grains and do not influence the semiconductor/gate dielectric interface and the charge transport properties of the devices. Hole field-effect mobilities as high as 2.4 × 10-4 cm2 V-1 s-1 were obtained and could be slightly improved by a solvent vapor treatment due to changes in the film crystallinity. Overall, this study demonstrates that J-aggregate bisazomethine dye thin films are good candidates for the realization of organic electronic devices.

Original languageEnglish
Pages (from-to)999-1003
Number of pages5
JournalOrganic Electronics
Issue number6
Publication statusPublished - Jun 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Biomaterials


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