Abstract
Ordering process and subsequent formation of anti-phase boundaries (APBs) in the long-period superstructures of X3Ti2 (Ga 3Ti2), X5Ti3 (Al5Ti 3) and h-X2Ti (h-Al2Ti) in -rich TiX (X=Al or Ga) single crystals were examined by a high-resolution transmission electron microscopy. Formation of the APBs is closely related to the unique units of ordered base clusters such as Ti4X, Ti3X and Ti 2X which form square, fat rhombus and lean rhombus shapes, respectively, in the (002) Ti-rich layers of the L10 matrix. The Al5Ti3-type anti-phase domains (APDs) with various sizes in diameter are introduced in Ti-62.5at.%Al crystals by appropriate heat treatment. Almost all the X5Ti3-type APBs lie on {110) and a type of APB (named Type A) with the extremely low APB energy was found. In contrast, no APBs are introduced in X3Ti2 and h-X 2Ti because of their relatively higher energies compared with those in X5Ti3. As a result, the L10 matrix phase remains between APDs as a thin boundary phase for h-Al2Ti.
Original language | English |
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Pages | 231-236 |
Number of pages | 6 |
Publication status | Published - 2005 |
Event | International Conference on Solid-Solid Phase Transformations in Inorganic Materials 2005 - Phoenix, AZ, United States Duration: May 29 2005 → Jun 3 2005 |
Other
Other | International Conference on Solid-Solid Phase Transformations in Inorganic Materials 2005 |
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Country/Territory | United States |
City | Phoenix, AZ |
Period | 5/29/05 → 6/3/05 |
All Science Journal Classification (ASJC) codes
- Engineering(all)