Optimization of growth procedure for silicon oxinitride (Si₄O₅N₃) single-layer on SiC(0001)

Earth and Planetary Sciences

• Growth 100%
• Electron Diffraction 100%
• Silicon 66%
• Amount 33%
• Condition 33%
• Time 33%
• Report 33%
• Oxidation 33%
• Deposition 33%
• Optimization 33%
• Isolators 33%
• Oxynitrides 33%
• Scanning Tunneling Microscopy 33%
• Suggestion 33%
• Ultrahigh Vacuum 33%
• Electron Spectroscopy 33%

Physics

• Growth 100%
• Electron Diffraction 100%
• Silicon 66%
• Optimization 33%
• Deposition 33%
• Ultrahigh Vacuum 33%
• Oxidation 33%
• Insulators 33%
• Scanning Tunneling Microscopy 33%
• Oxynitrides 33%
• Electron Spectroscopy 33%

Biochemistry, Genetics and Molecular Biology

• Growth 100%
• Energy 100%
• Electron Diffraction 100%
• Alpha Oxidation 33%
• Surface Property 33%
• Time 33%
• Vacuum 33%
• Scanning Tunneling Microscopy 33%
• Auger Electron Spectroscopy 33%