TY - JOUR
T1 - Optical emission spectroscopic study on H-assisted plasma for anisotropic deposition of Cu films
AU - Umetsu, Jun
AU - Inoue, Kazuhiko
AU - Koga, Kazunori
AU - Shiratani, Masaharu
N1 - Funding Information:
This work was partly supported by a grant from the Japan Society of the Promotion of Science.
PY - 2008/3/1
Y1 - 2008/3/1
N2 - We have studied dependence of Ha intensity and electron density on the discharge power and gas flow rate ratio R = H2/(H2 + Ar), to obtain information on a discharge condition bringing about a high H flux to film surfaces, because irradiation of H atoms on surfaces removes impurities in films and enhances the deposition rate. The highest Ha intensity, which is obtained for the discharge power of 500 W and R=3.3%, is 10 times as high as that for previous deposition condition of the discharge power of 150 W and R=11%. Moreover emission spectra suggest Ar metastable contribute to H generation for R=3.3-33%.
AB - We have studied dependence of Ha intensity and electron density on the discharge power and gas flow rate ratio R = H2/(H2 + Ar), to obtain information on a discharge condition bringing about a high H flux to film surfaces, because irradiation of H atoms on surfaces removes impurities in films and enhances the deposition rate. The highest Ha intensity, which is obtained for the discharge power of 500 W and R=3.3%, is 10 times as high as that for previous deposition condition of the discharge power of 150 W and R=11%. Moreover emission spectra suggest Ar metastable contribute to H generation for R=3.3-33%.
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U2 - 10.1088/1742-6596/100/6/062007
DO - 10.1088/1742-6596/100/6/062007
M3 - Article
AN - SCOPUS:77954345926
SN - 1742-6588
VL - 100
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - PART 6
M1 - 062007
ER -