Optical characterization of the "E2" deep level in GaN

P. Hacke; P. Ramvall; S. Tanaka; Y. Aoyagi; A. Kuramata; K. Horino; H. Munekata

doi:10.1063/1.123180

Optical characterization of the "E2" deep level in GaN

P. Hacke
, P. Ramvall
, S. Tanaka
, Y. Aoyagi
, A. Kuramata
, K. Horino
, H. Munekata

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The correspondence between the E2 level (∼E_c-0.55 eV) in n-type GaN undergoing thermoionization and photoionizution was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, E^o=0.85 eV, and the Franck-Condon parameter, d_FC=0.30 eV at 90 K.

Original language	English
Pages (from-to)	543-545
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	4
DOIs	https://doi.org/10.1063/1.123180
Publication status	Published - Jan 25 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.123180

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abstract = "The correspondence between the E2 level (∼Ec-0.55 eV) in n-type GaN undergoing thermoionization and photoionizution was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, Eo=0.85 eV, and the Franck-Condon parameter, dFC=0.30 eV at 90 K.",

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AU - Hacke, P.

AU - Ramvall, P.

AU - Tanaka, S.

AU - Aoyagi, Y.

AU - Kuramata, A.

AU - Horino, K.

AU - Munekata, H.

PY - 1999/1/25

Y1 - 1999/1/25

N2 - The correspondence between the E2 level (∼Ec-0.55 eV) in n-type GaN undergoing thermoionization and photoionizution was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, Eo=0.85 eV, and the Franck-Condon parameter, dFC=0.30 eV at 90 K.

AB - The correspondence between the E2 level (∼Ec-0.55 eV) in n-type GaN undergoing thermoionization and photoionizution was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, Eo=0.85 eV, and the Franck-Condon parameter, dFC=0.30 eV at 90 K.

UR - https://www.scopus.com/pages/publications/0033601589

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U2 - 10.1063/1.123180

DO - 10.1063/1.123180

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SP - 543

EP - 545

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Optical characterization of the "E2" deep level in GaN

Abstract

All Science Journal Classification (ASJC) codes

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