TY - JOUR
T1 - Optical assessment of silicon nanowire arrays fabricated by metal-assisted chemical etching
AU - Kato, Shinya
AU - Kurokawa, Yasuyoshi
AU - Watanabe, Yuya
AU - Yamada, Yasuharu
AU - Yamada, Akira
AU - Ohta, Yoshimi
AU - Niwa, Yusuke
AU - Hirota, masaki
N1 - Funding Information:
This work was supported in part by JST, PRESTO, and the Nissan Foundation for Promotion of Science.
PY - 2013/6/13
Y1 - 2013/6/13
N2 - Silicon nanowire (SiNW) arrays were prepared on silicon substrates by metal-assisted chemical etching and peeled from the substrates, and their optical properties were measured. The absorption coefficient of the SiNW arrays was higher than that for the bulk silicon over the entire region. The absorption coefficient of a SiNW array composed of 10-μm-long nanowires was much higher than the theoretical absorptance of a 10-μm-thick flat Si wafer, suggesting that SiNW arrays exhibit strong optical confinement. To reveal the reason for this strong optical confinement demonstrated by SiNW arrays, angular distribution functions of their transmittance were experimentally determined. The results suggest that Mie-related scattering plays a significant role in the strong optical confinement of SiNW arrays.
AB - Silicon nanowire (SiNW) arrays were prepared on silicon substrates by metal-assisted chemical etching and peeled from the substrates, and their optical properties were measured. The absorption coefficient of the SiNW arrays was higher than that for the bulk silicon over the entire region. The absorption coefficient of a SiNW array composed of 10-μm-long nanowires was much higher than the theoretical absorptance of a 10-μm-thick flat Si wafer, suggesting that SiNW arrays exhibit strong optical confinement. To reveal the reason for this strong optical confinement demonstrated by SiNW arrays, angular distribution functions of their transmittance were experimentally determined. The results suggest that Mie-related scattering plays a significant role in the strong optical confinement of SiNW arrays.
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U2 - 10.1186/1556-276X-8-216
DO - 10.1186/1556-276X-8-216
M3 - Letter
C2 - 23651912
AN - SCOPUS:84878766370
SN - 1931-7573
VL - 8
SP - 1
EP - 6
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
M1 - 216
ER -