Optical assessment of silicon nanowire arrays fabricated by metal-assisted chemical etching

Shinya Kato, Yasuyoshi Kurokawa, Yuya Watanabe, Yasuharu Yamada, Akira Yamada, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

Research output: Contribution to journalLetterpeer-review

33 Citations (Scopus)


Silicon nanowire (SiNW) arrays were prepared on silicon substrates by metal-assisted chemical etching and peeled from the substrates, and their optical properties were measured. The absorption coefficient of the SiNW arrays was higher than that for the bulk silicon over the entire region. The absorption coefficient of a SiNW array composed of 10-μm-long nanowires was much higher than the theoretical absorptance of a 10-μm-thick flat Si wafer, suggesting that SiNW arrays exhibit strong optical confinement. To reveal the reason for this strong optical confinement demonstrated by SiNW arrays, angular distribution functions of their transmittance were experimentally determined. The results suggest that Mie-related scattering plays a significant role in the strong optical confinement of SiNW arrays.

Original languageEnglish
Article number216
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Issue number1
Publication statusPublished - Jun 13 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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