Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation

Dong Wang, Hiroshi Nakashima

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6 Citations (Scopus)


Photoluminescence (PL) and dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) evaluations were performed for SiGe layers on insulator fabricated using Ge condensation by dry oxidation. Defect generation and transformation during the temperature ramp-up process were studied by PL. Band-band transition PL peaks were clearly observed for the as-grown wafers and the peak intensities decreased with an increase in the target temperature (Tt). Defect-related PL signals were observed at around 0.82, 0.88, 0.95, and 1.0 eV, which varied according to Tt and the SiGe thickness. The dependence of defect-related PL on Tt consists with that the defect generation of misfit-dislocation and transformation to stacking-faults with increasing Tt, which was conformed by transmission electron microscopy. After Ge condensation by dry oxidation, four strained Si/SiGe on insulator (SSGOI) wafers having different Ge fractions (Ge%) and Ge condensation temperatures (Tc) were evaluated using PL and dual-MOS DLTS methods. For the sample with Ge% = 20% and Tc = 1200 °C, a broad defect-related PL signal could be observed. Other SSGOI samples showed deep-level-free PL signal in the energy range from 0.77 eV to band gap, implying high wafer qualities. At mid-gap, the interface states densities (Dit) of wafers with Ge% = 15% and 20% were approximately 5 × 1011 and 1 × 1012 cm-2 eV-1, respectively, which were higher than that of Si/buried oxide (BOX) in a Si on insulator wafer. The high Dit of SiGe/BOX was not due to interface roughness but due to the weakness of Ge-O bonds. No deep traps with concentration great than 3 × 1011 cm-3 were detected by dual-MOS DLTS measurement in the energy range of from 0.07 to 0.24 eV above the top of valence band. Based on the PL and dual-MOS DLTS evaluations, wafer quality dependences on Ge condensation parameters were discussed. One-dimensional mappings for SiGe layer crystallinity by band-band PL intensity and Dit by dual-MOS DLTS were also performed from center to edge for all the SSGOI wafers.

Original languageEnglish
Pages (from-to)841-849
Number of pages9
JournalSolid-State Electronics
Issue number8
Publication statusPublished - Aug 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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