Operation of major line bubble propagation path for bloch line memory

A new type of current access bubble propagation path for the major line of vertical Bloch line memory has been designed and processed on a standard as-grown 5 um bubble garnet film, but having the film thickness of 2.1 um. The bubble propagation path consists of a meandering conductor and high coercive force hard magnetic patterns of CoPt, providing an offset force for the bubble motion. A reasonable bias field margin (14% of mid bias field value) for the bubble propagation was measured in a test chip. The bias field compatibility between bubbles on the major line bubble propagation path and confined stripe domains for minor loop has been confirmed experimentally.