Operation mechanism on SiGe/Si/Si PIN diodes explained using numerical simulation

Fumihiko Hirose, Kazunari Kurita, Yutaka Takahashi, Masashi Mukaida

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    Fast recovery characteristics can be obtained in SiGe/Si/Si pin diodes compared to conventional Si pin diodes without any intentional lifetime controls into the i-layers. In the present pin diodes, the tradeoff between the fast recovery and the low forward voltage drop, which is inherent in the conventional pin diodes, can be effectively eliminated. The present diodes allow low power dissipation with fast operation in the switching circuits. The ID device simulation suggests that the thin SiGe p-layer with a suppressed minority carrier lifetime enhances the diffusion current in the SiGe pin diode, where the stored minority carrier effectively decreases in the Si i-layer.

    Original languageEnglish
    Pages (from-to)G160-G163
    JournalElectrochemical and Solid-State Letters
    Volume8
    Issue number7
    DOIs
    Publication statusPublished - 2005

    All Science Journal Classification (ASJC) codes

    • General Chemical Engineering
    • General Materials Science
    • Physical and Theoretical Chemistry
    • Electrochemistry
    • Electrical and Electronic Engineering

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