One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

Akira Nakajima; Sin Ichi Nishizawa; Hiromichi Ohashi; Hiroaki Yonezawa; Kazuo Tsutsui; Kuniyuki Kakushima; Hitoshi Wakabayashi; Hiroshi Iwai

doi:10.1109/ISPSD.2014.6856021

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

Akira Nakajima, Sin Ichi Nishizawa, Hiromichi Ohashi, Hiroaki Yonezawa, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

20 Citations (Scopus)

Abstract

Monolithic operation of GaN-based P-channel (Pch) and N-channel (Nch) heterojunction field effect transistors (HFETs) are demonstrated for the first time. The Pch and Nch HFETs were fabricated on a polarization junction platform with polarization induced 2D hole gas (2DHG) and 2D electron gas (2DEG). Because of temperature independent densities of the 2DHG and 2DEG, the HFETs can be operated in wide temperature range. Based on a measured 2DHG mobility, footprints of low-voltage Pch HFETs for gate drive applications were estimated by device simulation.

Original language	English
Title of host publication	Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	241-244
Number of pages	4
ISBN (Print)	9781479929177
DOIs	https://doi.org/10.1109/ISPSD.2014.6856021
Publication status	Published - 2014
Externally published	Yes
Event	26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 - Waikoloa, HI, United States Duration: Jun 15 2014 → Jun 19 2014

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Other

Other	26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
Country/Territory	United States
City	Waikoloa, HI
Period	6/15/14 → 6/19/14

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/ISPSD.2014.6856021

Cite this

Nakajima, A., Nishizawa, S. I., Ohashi, H., Yonezawa, H., Tsutsui, K., Kakushima, K., Wakabayashi, H., & Iwai, H. (2014). One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors. In Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 (pp. 241-244). Article 6856021 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2014.6856021

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors. / Nakajima, Akira; Nishizawa, Sin Ichi; Ohashi, Hiromichi et al.
Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 241-244 6856021 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakajima, A, Nishizawa, SI, Ohashi, H, Yonezawa, H, Tsutsui, K, Kakushima, K, Wakabayashi, H & Iwai, H 2014, One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors. in Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014., 6856021, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., pp. 241-244, 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014, Waikoloa, HI, United States, 6/15/14. https://doi.org/10.1109/ISPSD.2014.6856021

Nakajima A, Nishizawa SI, Ohashi H, Yonezawa H, Tsutsui K, Kakushima K et al. One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors. In Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 241-244. 6856021. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2014.6856021

Nakajima, Akira ; Nishizawa, Sin Ichi ; Ohashi, Hiromichi et al. / One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors. Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 241-244 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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title = "One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors",

abstract = "Monolithic operation of GaN-based P-channel (Pch) and N-channel (Nch) heterojunction field effect transistors (HFETs) are demonstrated for the first time. The Pch and Nch HFETs were fabricated on a polarization junction platform with polarization induced 2D hole gas (2DHG) and 2D electron gas (2DEG). Because of temperature independent densities of the 2DHG and 2DEG, the HFETs can be operated in wide temperature range. Based on a measured 2DHG mobility, footprints of low-voltage Pch HFETs for gate drive applications were estimated by device simulation.",

author = "Akira Nakajima and Nishizawa, {Sin Ichi} and Hiromichi Ohashi and Hiroaki Yonezawa and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai",

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AU - Nakajima, Akira

AU - Nishizawa, Sin Ichi

AU - Ohashi, Hiromichi

AU - Yonezawa, Hiroaki

AU - Tsutsui, Kazuo

AU - Kakushima, Kuniyuki

AU - Wakabayashi, Hitoshi

AU - Iwai, Hiroshi

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N2 - Monolithic operation of GaN-based P-channel (Pch) and N-channel (Nch) heterojunction field effect transistors (HFETs) are demonstrated for the first time. The Pch and Nch HFETs were fabricated on a polarization junction platform with polarization induced 2D hole gas (2DHG) and 2D electron gas (2DEG). Because of temperature independent densities of the 2DHG and 2DEG, the HFETs can be operated in wide temperature range. Based on a measured 2DHG mobility, footprints of low-voltage Pch HFETs for gate drive applications were estimated by device simulation.

AB - Monolithic operation of GaN-based P-channel (Pch) and N-channel (Nch) heterojunction field effect transistors (HFETs) are demonstrated for the first time. The Pch and Nch HFETs were fabricated on a polarization junction platform with polarization induced 2D hole gas (2DHG) and 2D electron gas (2DEG). Because of temperature independent densities of the 2DHG and 2DEG, the HFETs can be operated in wide temperature range. Based on a measured 2DHG mobility, footprints of low-voltage Pch HFETs for gate drive applications were estimated by device simulation.

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BT - Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014

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One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

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