One bond-type migration of phosphorus in silicon by interstitialcy mechanism

Masayuki Yoshida, Yoichi Kamiura, Reiji Tsuruno, Manabu Takahashi, Hajime Tomokage

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


It is assumed that an interstitial phosphorus atom and a self-interstitial, Pi and I, are of the interstitialcy type. One bond-type migration is applied to their migration. It is concluded that there is essentially no difference between the migrations of a P-I pair, (PI), and Pi by the interstitialcy mechanism and between the chemical processes for the formation-dissociation of (PI) and the kick-out mechanism of Pi.

Original languageEnglish
Pages (from-to)6376-6377
Number of pages2
JournalJapanese Journal of Applied Physics
Issue number12
Publication statusPublished - Dec 1998

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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